Datasheet > 存储 > SRAM> CY7C1268V18-400BZXI

CY7C1268V18-400BZXI

更新时间： 2024-11-29 05:09:31

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		静态存储器双倍数据速率
页数	文件大小	规格书
27页	1244K
描述
36-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)

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CY7C1266V18

CY7C1277V18

CY7C1268V18

CY7C1270V18

36-Mbit DDR-II+ SRAM 2-Word

Burst Architecture (2.5 Cycle Read Latency)

Functional Description

Features

• 36-Mbit density (4M x 8, 4M x 9, 2M x 18, 1M x 36)

• 300 MHz to 400 MHz clock for high bandwidth

• 2-Word burst for reducing address bus frequency

The CY7C1266V18, CY7C1277V18, CY7C1268V18, and

CY7C1270V18 are 1.8V Synchronous Pipelined SRAMs

equipped with DDR-II+ architecture. The DDR-II+ consists of

an SRAM core with advanced synchronous peripheral

circuitry. Addresses for read and write are latched on alternate

rising edges of the input (K) clock. Write data is registered on

the rising edges of both K and K. Read data is driven on the

rising edges of both K and K. Each address location is

associated with two 8-bit words (CY7C1266V18), 9-bit words

(CY7C1277V18), 18-bit words (CY7C1268V18), or 36-bit

words (CY7C1270V18), that burst sequentially into or out of

the device.

• Double Data Rate (DDR) interfaces

(data transferred at 800 MHz) @ 400 MHz

• Read latency of 2.5 clock cycles

• Two input clocks (K and K) for precise DDR timing

— SRAM uses rising edges only

• Echo clocks (CQ and CQ) simplify data capture in high

speed systems

Asynchronous inputs include output impedance matching

input (ZQ). Synchronous data outputs (Q, sharing the same

physical pins as the data inputs, D) are tightly matched to the

two output echo clocks CQ/CQ, eliminating the need to

capture data separately from each individual DDR SRAM in

the system design.

• Data valid pin (QVLD) to indicate valid data on the output

• Synchronous internally self-timed writes

[1]

• Core V_DD= 1.8V ± 0.1V; IO V_DDQ= 1.4V to V_DD

• HSTL inputs and variable drive HSTL output buffers

• Available in 165-ball FBGA package (15 x 17 x 1.4 mm)

• Offered in both in Pb-free and non Pb-free packages

• JTAG 1149.1 compatible test access port

All synchronous inputs pass through input registers controlled

by the K or K input clocks. All data outputs pass through output

registers controlled by the K or K input clocks. Writes are

conducted with on-chip synchronous self-timed write circuitry.

• Delay Lock Loop (DLL) for accurate data placement

Configurations

With Read Cycle Latency of 2.5 cycles:

CY7C1266V18 – 4M x 8

CY7C1277V18 – 4M x 9

CY7C1268V18 – 2M x 18

CY7C1270V18 – 1M x 36

Selection Guide

400 MHz

400

375 MHz

333 MHz

333

300 MHz

300

Unit

MHz

Maximum Operating Frequency

Maximum Operating Current

375

1280

1210

1080

1000

Note

1. The QDR consortium specification for V

is 1.5V + 0.1V. The Cypress QDR devices exceed the QDR consortium specification and are capable of supporting

DDQ

= 1.4V to V

DDQ

Cypress Semiconductor Corporation

Document Number: 001-06347 Rev. *C

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised May 14, 2007

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与CY7C1268V18-400BZXI相关器件

型号	品牌	获取价格	描述	数据表
CY7C1268XV18	CYPRESS	获取价格	36-Mbit DDR II Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency)
CY7C1268XV18-600BZXC	CYPRESS	获取价格	36-Mbit DDR II Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency)
CY7C1268XV18-633BZXC	CYPRESS	获取价格	36-Mbit DDR II Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency)
CY7C1268XV18-633BZXC	INFINEON	获取价格	Synchronous SRAM
CY7C1270KV18	CYPRESS	获取价格	36-Mbit DDR II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
CY7C1270KV18-400BZC	CYPRESS	获取价格	36-Mbit DDR II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
CY7C1270KV18-400BZXC	CYPRESS	获取价格	36-Mbit DDR II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
CY7C1270KV18-400BZXC	INFINEON	获取价格	DDR-II+ CIO
CY7C1270KV18-400BZXI	CYPRESS	获取价格	36-Mbit DDR II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
CY7C1270KV18-400BZXI	INFINEON	获取价格	DDR-II+ CIO

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