是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | BGA |
包装说明: | 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 | 针数: | 165 |
Reach Compliance Code: | unknown | 风险等级: | 5.8 |
Is Samacsys: | N | 最长访问时间: | 0.45 ns |
其他特性: | PIPELINED ARCHITECTURE | JESD-30 代码: | R-PBGA-B165 |
JESD-609代码: | e1 | 长度: | 15 mm |
内存密度: | 18874368 bit | 内存集成电路类型: | DDR SRAM |
内存宽度: | 18 | 湿度敏感等级: | NOT SPECIFIED |
功能数量: | 1 | 端子数量: | 165 |
字数: | 1048576 words | 字数代码: | 1000000 |
工作模式: | SYNCHRONOUS | 最高工作温度: | 70 °C |
最低工作温度: | 组织: | 1MX18 | |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | LBGA |
封装形状: | RECTANGULAR | 封装形式: | GRID ARRAY, LOW PROFILE |
并行/串行: | PARALLEL | 峰值回流温度(摄氏度): | 260 |
认证状态: | COMMERCIAL | 座面最大高度: | 1.4 mm |
最大供电电压 (Vsup): | 1.9 V | 最小供电电压 (Vsup): | 1.7 V |
标称供电电压 (Vsup): | 1.8 V | 表面贴装: | YES |
温度等级: | COMMERCIAL | 端子面层: | TIN SILVER COPPER |
端子形式: | BALL | 端子节距: | 1 mm |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | 20 |
宽度: | 13 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
CY7C1168V18-400BZXI | CYPRESS |
获取价格 |
DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBG | |
CY7C11701KV18 | CYPRESS |
获取价格 |
18-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) | |
CY7C11701KV18-400BZXC | CYPRESS |
获取价格 |
18-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) | |
CY7C1170KV18 | CYPRESS |
获取价格 |
18-Mbit DDR II SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) | |
CY7C1170KV18-400BZC | CYPRESS |
获取价格 |
18-Mbit DDR II SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) | |
CY7C1170KV18-400BZC | INFINEON |
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DDR-II+ CIO | |
CY7C1170KV18-400BZXC | CYPRESS |
获取价格 |
18-Mbit DDR II SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) | |
CY7C1170KV18-450BZXC | CYPRESS |
获取价格 |
18-Mbit DDR II SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) | |
CY7C1170KV18-450BZXC | INFINEON |
获取价格 |
DDR-II+ CIO | |
CY7C1170KV18-550BZC | CYPRESS |
获取价格 |
18-Mbit DDR II SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) |