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CY14B104K-ZS15XI PDF预览

CY14B104K-ZS15XI

更新时间: 2023-07-15 00:00:00
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器光电二极管
页数 文件大小 规格书
29页 747K
描述
Non-Volatile SRAM, 512KX8, 15ns, CMOS, PDSO44, ROHS COMPLIANT, TSOP2-44

CY14B104K-ZS15XI 数据手册

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PRELIMINARY  
CY14B104K/CY14B104M  
The HSB signal is monitored by the system to detect if an  
AutoStore cycle is in progress.  
accesses intervene in the sequence, or the sequence is aborted  
and no STORE or RECALL takes place.  
To initiate the software STORE cycle, the following read  
sequence must be performed:  
Hardware STORE (HSB) Operation  
1. Read address 0x4E38 Valid READ  
2. Read address 0xB1C7 Valid READ  
3. Read address 0x83E0 Valid READ  
4. Read address 0x7C1F Valid READ  
5. Read address 0x703F Valid READ  
6. Read address 0x8FC0 Initiate STORE cycle  
The CY14B104K/CY14B104M provides the HSB pin to control  
and acknowledge the STORE operations. The HSB pin is used  
to request a hardware STORE cycle. When the HSB pin is driven  
LOW, the CY14B104K/CY14B104M conditionally initiates a  
STORE operation after tDELAY. An actual STORE cycle begins  
only if a write to the SRAM has taken place since the last STORE  
or RECALL cycle. The HSB pin also acts as an open drain driver  
that is internally driven LOW to indicate a busy condition when  
the STORE (initiated by any means) is in progress.  
The software sequence may be clocked with CE controlled reads  
or OE controlled reads. After the sixth address in the sequence  
is entered, the STORE cycle commences and the chip is  
disabled. It is important to use read cycles and not write cycles  
in the sequence, although it is not necessary that OE be LOW  
for a valid sequence. After the tSTORE cycle time is fulfilled, the  
SRAM is activated again for read and write operations.  
SRAM read and write operations that are in progress when HSB  
is driven LOW by any means are given time to complete before  
the STORE operation is initiated. After HSB goes LOW, the  
CY14B104K/CY14B104M continues SRAM operations for  
tDELAY. During tDELAY, multiple SRAM read operations may take  
place. If a write is in progress when HSB is pulled LOW it is  
allowed a time, tDELAY, to complete. However, any SRAM write  
cycles requested after HSB goes LOW is inhibited until HSB  
returns HIGH.  
Software RECALL  
Data is transferred from the nonvolatile memory to the SRAM by  
a software address sequence. A software RECALL cycle is  
initiated with a sequence of read operations in a manner similar  
to the software STORE initiation. To initiate the RECALL cycle,  
the following sequence of CE controlled read operations must be  
performed:  
During any STORE operation, regardless of how it is initiated,  
the CY14B104K/CY14B104M continues to drive the HSB pin  
LOW, releasing it only when the STORE is complete. Upon  
completion  
of  
the  
STORE  
operation  
the  
CY14B104K/CY14B104M remains disabled until the HSB pin  
returns HIGH. Leave the HSB unconnected if it is not used.  
1. Read address 0x4E38 Valid READ  
2. Read address 0xB1C7 Valid READ  
3. Read address 0x83E0 Valid READ  
4. Read address 0x7C1F Valid READ  
5. Read address 0x703F Valid READ  
6. Read address 0x4C63 Initiate RECALL cycle  
Hardware RECALL (Power Up)  
During power up, or after any low power condition (VCC  
<
V
SWITCH), an internal RECALL request is latched. When VCC  
again exceeds the sense voltage of VSWITCH, a RECALL cycle  
is automatically initiated and takes tHRECALL to complete.  
Internally, RECALL is a two step procedure. First, the SRAM data  
is cleared; then, the nonvolatile information is transferred into the  
SRAM cells. After the tRECALL cycle time the SRAM is again  
ready for read and write operations. The RECALL operation in  
no way alters the data in the nonvolatile elements.  
Software STORE  
Data is transferred from the SRAM to the nonvolatile memory by  
a software address sequence. The CY14B104K/CY14B104M  
software STORE cycle is initiated by executing sequential CE  
controlled read cycles from six specific address locations in  
exact order. During the STORE cycle, an erase of the previous  
nonvolatile data is first performed, followed by a program of the  
nonvolatile elements. After a STORE cycle is initiated, further  
input and output are disabled until the cycle is completed.  
Because a sequence of reads from specific addresses is used  
for STORE initiation, it is important that no other read or write  
Document #: 001-07103 Rev. *I  
Page 4 of 29  
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