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CY14B104K-ZS45XIT PDF预览

CY14B104K-ZS45XIT

更新时间: 2024-01-23 20:34:41
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 存储内存集成电路静态存储器光电二极管时钟
页数 文件大小 规格书
33页 1092K
描述
4 Mbit (512K x 8/256K x 16) nvSRAM with Real Time Clock

CY14B104K-ZS45XIT 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TSOP2
包装说明:TSOP2, TSOP44,.46,32针数:44
Reach Compliance Code:compliantECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.43
Is Samacsys:N最长访问时间:45 ns
JESD-30 代码:R-PDSO-G44JESD-609代码:e4
长度:18.415 mm内存密度:4194304 bit
内存集成电路类型:NON-VOLATILE SRAM内存宽度:8
湿度敏感等级:3功能数量:1
端子数量:44字数:524288 words
字数代码:512000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:512KX8封装主体材料:PLASTIC/EPOXY
封装代码:TSOP2封装等效代码:TSOP44,.46,32
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):260
电源:3/3.3 V认证状态:Not Qualified
座面最大高度:1.194 mm最大待机电流:0.005 A
子类别:SRAMs最大压摆率:0.052 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:GULL WING
端子节距:0.8 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30宽度:10.16 mm
Base Number Matches:1

CY14B104K-ZS45XIT 数据手册

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CY14B104K, CY14B104M  
4-Mbit (512 K × 8/256 K × 16) nvSRAM  
with Real Time Clock  
Watchdog timer  
Features  
Clock alarm with programmable interrupts  
Capacitor or battery backup for RTC  
25 ns and 45 ns access times  
Internally organized as 512 K × 8 (CY14B104K) or 256 K × 16  
(CY14B104M)  
Industrial temperature  
Hands off automatic STORE on power-down with only a small  
capacitor  
44-pin and 54-pin thin small outline package (TSOP II)  
Pb-free and restriction of hazardous substances (RoHS)  
compliant  
STORE to QuantumTrap nonvolatile elements is initiated by  
software, device pin, or AutoStore on power-down  
Functional Description  
RECALL to SRAM is initiated by software or power-up  
High reliability  
The Cypress CY14B104K and CY14B104M combines a 4-Mbit  
nonvolatile static RAM (nvSRAM) with a full-featured RTC in a  
monolithic integrated circuit. The embedded nonvolatile  
elements incorporate QuantumTrap technology producing the  
world’s most reliable nonvolatile memory. The SRAM is read and  
written infinite number of times, while independent nonvolatile  
data resides in the nonvolatile elements.  
Infinite read, write, and RECALL cycles  
1 million STORE cycles to QuantumTrap  
20 year data retention  
Single 3-V +20%, –10% operation  
The RTC function provides an accurate clock with leap year  
tracking and a programmable, high accuracy oscillator. The  
alarm function is programmable for periodic minutes, hours,  
days, or months alarms. There is also a programmable watchdog  
timer for process control.  
Data integrity of Cypress nvSRAM combined with full-featured  
real time clock (RTC)  
VCA  
Logic Block Diagram[1, 2, 3]  
VCC  
Quatrum  
Trap  
P
2048 X 2048  
VRTCbat  
VRTCcap  
A0  
A1  
A2  
A3  
A4  
A5  
A6  
A7  
A8  
A17  
POWER  
CONTROL  
R
O
W
STORE  
RECALL  
STORE/RECALL  
CONTROL  
D
E
C
O
D
E
R
HSB  
STATIC RAM  
ARRAY  
2048 X 2048  
SOFTWARE  
DETECT  
A14 - A2  
A18  
DQ0  
DQ1  
DQ2  
Xout  
Xin  
DQ3  
DQ4  
RTC  
I
INT  
N
P
U
T
B
U
F
F
E
R
S
DQ5  
DQ6  
DQ7  
COLUMN I/O  
MUX  
A18- A0  
DQ8  
DQ9  
DQ10  
OE  
COLUMN DEC  
WE  
DQ11  
DQ12  
DQ13  
DQ14  
CE  
BLE  
A9 A10  
A
11 A12 A13 A14 A15 A16  
DQ15  
BHE  
Notes  
1. Address A - A for ×8 configuration and Address A - A for ×16 configuration.  
0
18  
0
17  
2. Data DQ - DQ for ×8 configuration and Data DQ - DQ for ×16 configuration.  
0
7
0
15  
3. BHE and BLE are applicable for ×16 configuration only.  
Cypress Semiconductor Corporation  
Document #: 001-07103 Rev. *S  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised January 21, 2011  
[+] Feedback  

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