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CXXXXT290-SXX00-A PDF预览

CXXXXT290-SXX00-A

更新时间: 2024-11-14 03:13:23
品牌 Logo 应用领域
科锐 - CREE /
页数 文件大小 规格书
6页 258K
描述
XThin㈢ LEDs

CXXXXT290-SXX00-A 数据手册

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®
XThin LEDs  
CxxxXT290-Sxx00-A  
Cree’s XThin LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials  
with Cree’s proprietary G•SiC® substrate to deliver superior price/performance for high-intensity LEDs. These LED  
chips have a geometrically enhanced Epi-down design to maximize light extraction efficiency and require only a  
single wire bond connection. These vertically structured LED chips are approximately 115 microns in height and  
require a low forward voltage. Cree’s XT™ chips are tested for conformity to optical and electrical specifications and  
the ability to withstand 1000V ESD. Applications for XThin LEDs include next-generation mobile appliances for use  
in their LCD backlights and digital camera flash where brightness, sub-miniaturization, and low power consumption  
are required.  
FEATURES  
APPLICATIONS  
XThin LED Performance  
Cellular Phone LCD Backlighting  
Digital Camera Flash for Mobile Appliance  
Mobile Phone Key Pads  
460 & 470 nm  
XT-12™ – 12.0 mW min.  
XT-16™ – 16.0 mW min.  
XT-18™ – 18.0 mW min.  
XT-21™ – 21.0 mW min.  
XT-24™ – 24.0 mW min.  
White LEDs  
Blue LEDs  
Green LEDs  
Automotive Dashboard Lighting  
LED Video Displays  
Audio Product Display Lighting  
Traffic Signals  
505nm – 8.5 mW min.  
527nm – 7.0 mW min.  
Thin 115 µm Chip  
Low Forward Voltage - 3.2 Typical at 20 mA  
Single Wire Bond Structure  
Class 2 ESD Rating  
CxxxXT290-Sxx00-A Chip Diagram  
Top View  
Bottom View  
Die Cross Section  
G•SiC LED Chip  
300 x 300 μm  
Backside  
Metalization  
Gold Bond Pad  
105 μm Diameter  
Cathode (-)  
Anode (+)  
SiC Substrate  
t = 115µm  
Subject to change without notice.  
www.cree.com  

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