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CXXXXT290-SXX00-X

更新时间： 2022-04-23 23:00:11
品牌 Logo 应用领域
科锐 - CREE /
页数 文件大小 规格书
6页 260K
描述
XThin㈢ LEDs

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CXXXXT290-SXX00-X 数据手册

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®
XThin LEDs  
CxxxXT290-Sxx00-x  
Cree’s XThin LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials  
with Cree’s proprietary G•SiC® substrate to deliver superior price/performance for high-intensity LEDs. These LED  
chips have a geometrically enhanced Epi-down design to maximize light extraction efficiency and require only a  
single wire bond connection. These vertically structured LED chips are approximately 115 microns in height and  
require a low forward voltage. Cree’s XT™ chips are tested for conformity to optical and electrical specifications  
and the ability to withstand 1000V ESD. Applications for XThin include next-generation mobile appliances for use  
in their LCD backlights and digital camera flash where brightness, sub-miniaturization, and low power consumption  
are required.  
FEATURES  
APPLICATIONS  
•
XThin LED Performance  
•
•
•
•
SMT Packages  
Cellular Phone LCD Backlighting  
Digital Camera Flash  
–
Blue  
XT-12™ – 12.0 mW min.  
XT-16™ – 16.0 mW min.  
XT-18™ – 18.0 mW min.  
XT-21™ – 21.0 mW min.  
XT-24™ – 24.0 mW min.  
Mobile Appliance Key Pads  
–
–
White LEDs  
Blue LEDs  
•
LED Video Displays  
–
Green – 7.0 mW min.  
•
•
•
•
Low Forward Voltage – 3.2 V Typical at 20 mA  
Class 2 ESD Rating  
Sn Contact for Low-Temp. Die Attach Methods  
Die Attach Options  
–
–
Flux Eutectic; Flux & Temperature (-C)  
Eutectic; Temperature & Pressure (-D)  
CxxxXT290-Sxx00-x Chip Diagram  
Top View  
Bottom View  
Die Cross Section  
G•SiC LED Chip  
300 x 300 μm  
Backside  
Contact  
Metal  
Gold Bond Pad  
105 μm Diameter  
Cathode (-)  
Bottom View for -C  
Bottom View for -D  
SiC Substrate  
t = 115 µm  
Anode (+)  
Subject to change without notice.  
www.cree.com  
ꢀ
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