CSL13002

更新时间： 2024-10-30 03:27:03

品牌	Logo	应用领域
CDIL		晶体开关晶体管高压局域网
页数	文件大小	规格书
4页	136K
描述
NPN SILICON PLANAR EPITAXIAL, HIGH SPEED, HIGH VOLTAGE SWITCHING TRANSISTOR

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中文翻译

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技术参数
数据手册

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CSL13002 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.61
Is Samacsys：	N	Base Number Matches：	1

CSL13002 数据手册

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

NPN SILICON PLANAR EPITAXIAL, HIGH SPEED,

HIGH VOLTAGE SWITCHING TRANSISTOR

CSL13002

TO-92

Plastic Package

Applications

Suitable for Lighting, Switching Regulator and Motor Control

ABSOLUTE MAXIMUM RATINGS

VALUE

400

UNIT

DESCRIPTION

SYMBOL

V_CEO

Collector Emitter Voltage

V_CBO

V_EBO

I_C

600

Collector Base Voltage

9.0

Emitter Base Voltage

1.2

Collector Current Continuous

Power Dissipation @ T_a=25ºC

P_D

1.0

ºC

T_j

150

Junction Temperature

T_stg

- 55 to +150

Storage Temperature Range

THERMAL RESISTANCE

R_{th (j-a)}

125

ºC/W

Junction to Ambient in free air

ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

TEST CONDITION

MIN TYP MAX

UNIT

I_CBO

V_CB=600V_,I_E=0

Collector Cut Off Current

I_EBO

*h_FE

V_EB=9V, I_C=0

Emitter Cut Off Current

DC Current Gain

I_C=0.2A, V_CE=5V

I_C=0.3A, I_B=60mA

I_C=0.1A

*V_{CE (sat)}

Collector Emitter Saturation Voltage

Base Emitter Saturation Voltage

Storage Time

0.8

1.2

6.0

*V_{BE (sat)}

t_s

2.0

5.0

f_T

I_C=0.1A, V_CE=10V, f=1MHz

Current Gain Bandwidth Product

MHz

*Pulse Test:- PW=300ms, Duty Cycle=2%

CSL13002Rev_1 200105E

Data Sheet

Page 1 of 4

Continental Device India Limited

12 3 4

中文翻译

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