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CSL13003 PDF预览

CSL13003

更新时间: 2024-11-20 06:49:35
品牌 Logo 应用领域
RECTRON 晶体开关晶体管功率双极晶体管高压局域网
页数 文件大小 规格书
5页 512K
描述
NPN SILICON PLANAR EPITAXIAL,HIGH SPEED, HIGH VOLTAGE SWITCHING TRANSISTOR

CSL13003 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-92
包装说明:PLASTIC PACKAGE-3针数:3
Reach Compliance Code:compliantHTS代码:8541.29.00.95
风险等级:5.7Is Samacsys:N
最大集电极电流 (IC):1.5 A集电极-发射极最大电压:400 V
配置:SINGLE最小直流电流增益 (hFE):4
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):265
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):4 MHz
Base Number Matches:1

CSL13003 数据手册

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CSL13003  
TO-92 PLASTIC PACKAGE  
NPN SILICON PLANAR EPITAXIAL,HIGH SPEED,  
HIGH VOLTAGE SWITCHING TRANSISTOR  
Applications  
Suitable for Lighting, Switching Regulator and Motor Control  
B
C
E
ABSOLUTE MAXIMUM RATINGS  
VALUE  
600  
UNIT  
DESCRIPTION  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
V
V
V
A
Collector Base Voltage  
Collector Emitter (sus) Voltage  
Emitter Base Voltage  
400  
9.0  
1.5  
Collector Current Continuous  
**ICM  
PC  
3.0  
1.1  
8.8  
2.0  
16  
A
W
Peak  
Power Dissipation @ Ta=25ºC  
Derate Above 25ºC  
Power Dissipation @ TLead=25ºC  
mW/ ºC  
W
PD  
mW/ ºC  
Derate Above 25ºC  
Operating And Storage Junction Temperature  
Range  
Tj, Tstg  
- 65 to +150  
ºC  
THERMAL RESISTANCE  
Junction to Case, Tc=25ºC  
Rth (j-c)  
Rth (j-L)  
Rth (j-a)  
48.0  
62.5  
ºC/W  
ºC/W  
ºC/W  
Junction to Lead  
113.6  
Junction to Ambient in free air  
`
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)  
DESCRIPTION  
SYMBOL  
VCBO  
*VCEO (sus)  
ICBO  
TEST CONDITION  
MIN TYP MAX  
UNIT  
V
V
mA  
mA  
mA  
IC=1mA, IE=0  
IC=10mA, IB=0  
VCB=600V, IE=0  
Collector Base Voltage  
Collector Emitter (sus) Voltage  
Collector Cut Off Current  
600  
400  
1.0  
5.0  
1.0  
VCB=600V, IE=0, Tc=100ºC  
VEB=9V, IC=0  
IC=0.3A, VCE=2V (Note1)  
IC=0.5A, VCE=2V  
IEBO  
*hFE  
Emitter Cut Off Current  
DC Current Gain  
10  
8.0  
4.0  
30  
40  
25  
IC=1A, VCE=2V  
*VCE (sat)  
IC=0.5A, IB=0.1A  
IC=1A, IB=0.25A  
IC=1.5A, IB=0.5A  
Collector Emitter Saturation Voltage  
0.5  
1.0  
3.0  
1.0  
1.0  
1.2  
1.1  
V
V
V
V
V
V
V
IC=1A, IB=0.25A,Tc=100ºC  
IC=0.5A, IB=0.1A  
IC=1A, IB=0.25A  
IC=1A, IB=0.25A,Tc=100ºC  
*VBE (sat)  
Base Emitter Saturation Voltage  
* Pulse Test: PW=300ms, Duty Cycle=2%  
** Pulse Test: Pulse Width=5ms, Duty Cycle=10%  

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