CSL13003

更新时间： 2024-10-29 23:14:31

品牌	Logo	应用领域
CDIL		晶体开关晶体管高压局域网
页数	文件大小	规格书
5页	84K
描述
NPN SILICON PLANAR EPITAXIAL, HIGH SPEED, HIGH VOLTAGE SWITCHING TRANSISTOR

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中文翻译

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数据手册

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CSL13003 数据手册

Continental Device India Limited

An ISO/TS 16949 and ISO 9001 Certified Company

NPN SILICON PLANAR EPITAXIAL, HIGH SPEED,

HIGH VOLTAGE SWITCHING TRANSISTOR

CSL13003

TO-92

Plastic Package

Applications

Suitable for Lighting, Switching Regulator and Motor Control

ABSOLUTE MAXIMUM RATINGS

VALUE

600

UNIT

DESCRIPTION

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

Collector Base Voltage

Collector Emitter (sus) Voltage

Emitter Base Voltage

400

9.0

1.5

Collector Current Continuous

**I_CM

P_C

3.0

1.1

8.8

2.0

Peak

Power Dissipation @ T_a=25ºC

Derate Above 25ºC

Power Dissipation @ T_Lead=25ºC

mW/ ºC

P_D

mW/ ºC

Derate Above 25ºC

Operating And Storage Junction Temperature

Range

T_j,T_stg

- 65 to +150

ºC

THERMAL RESISTANCE

Junction to Case, T_c=25ºC

R_{th (j-c)}

R_{th (j-L)}

R_{th (j-a)}

48.0

62.5

ºC/W

Junction to Lead

113.6

Junction to Ambient in free air

ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

V_CBO

*V_{CEO (sus)}

I_CBO

TEST CONDITION

MIN TYP MAX

600

400

UNIT

I_C=1mA, I_E=0

I_C=10mA, I_B=0

V_CB=600V_,I_E=0

Collector Base Voltage

Collector Emitter (sus) Voltage

Collector Cut Off Current

1.0

5.0

1.0

V_CB=600V_,I_E=0, T_c=100ºC

V_EB=9V, I_C=0

I_C=0.3A, V_CE=2V (Note1)

I_C=0.5A, V_CE=2V

I_EBO

*h_FE

Emitter Cut Off Current

DC Current Gain

8.0

4.0

I_C=1A, V_CE=2V

*V_{CE (sat)}

I_C=0.5A, I_B=0.1A

I_C=1A, I_B=0.25A

I_C=1.5A, I_B=0.5A

Collector Emitter Saturation Voltage

Base Emitter Saturation Voltage

0.5

1.0

3.0

1.0

1.2

1.1

I_C=1A, I_B=0.25A,T_c=100ºC

I_C=0.5A, I_B=0.1A

I_C=1A, I_B=0.25A

I_C=1A, I_B=0.25A,T_c=100ºC

*V_{BE (sat)}

* Pulse Test: PW=300ms, Duty Cycle=2%

** Pulse Test: Pulse Width=5ms, Duty Cycle=10%

CSL13003Rev261103E

Data Sheet

Page 1 of 5

Continental Device India Limited

12 3 4 5

中文翻译

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