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CSHDD16-40CTR13LEADFREE PDF预览

CSHDD16-40CTR13LEADFREE

更新时间: 2024-10-26 19:58:27
品牌 Logo 应用领域
CENTRAL 功效瞄准线二极管
页数 文件大小 规格书
2页 545K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 8A, 40V V(RRM), Silicon, D2PAK-3

CSHDD16-40CTR13LEADFREE 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-263
包装说明:R-PSSO-G2针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.33
其他特性:HIGH RELIABILITY, LOW POWER LOSS应用:EFFICIENCY
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.7 VJESD-30 代码:R-PSSO-G2
JESD-609代码:e3最大非重复峰值正向电流:150 A
元件数量:2相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:8 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:40 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:MATTE TIN
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

CSHDD16-40CTR13LEADFREE 数据手册

 浏览型号CSHDD16-40CTR13LEADFREE的Datasheet PDF文件第2页 
CSHDD16-40C CSHDD16-100C  
CSHDD16-60C CSHDD16-200C  
www.centralsemi.com  
SURFACE MOUNT  
DUAL, COMMON CATHODE  
SILICON SCHOTTKY RECTIFIERS  
16 AMP, 40 THRU 200 VOLTS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CSHDD16-40C  
Series types are silicon Schottky rectifiers designed  
for surface mount applications requiring a low forward  
voltage drop. To order devices on 24mm Tape and  
Reel ( 800/13” Reel ), add TR13 suffix to part number.  
MARKING:  
CSHDD16-40C: CSHDD16-40C or CSHDD16-40  
CSHDD16-60C: CSHDD16-60C or CSHDD16-60  
CSHDD16-100C: CSHDD16-100C or CSHDD16-100  
CSHDD16-200C: CSHDD16-200C or CSHDD16-200  
D2PAK CASE  
FEATURES:  
• High reliability  
• UL flammability classification 94V-O  
• Low forward voltage  
• High current capability  
• High surge capacity  
• Superior lot to lot consistency  
• Low power loss, high effeciency  
• High voltage  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
CSHDD16  
C
SYMBOL  
-40C  
-60C  
-100C  
-200C  
UNITS  
Peak Repetitive Reverse Voltage  
DC Blocking Voltage  
V
40  
60  
60  
42  
100  
200  
V
RRM  
V
40  
28  
100  
70  
200  
140  
V
V
R
RMS Reverse Voltage  
V
R(RMS)  
Average Forward Current (T =75°C)  
C
I
16  
A
O
Peak Forward Surge Current, tp=8.3ms  
Operating and Storage Junction Temperature  
Typical Thermal Resistance  
I
150  
A
FSM  
T , T  
-65 to +175  
°C  
J
Θ
stg  
2.0  
50  
°C/W  
°C/W  
JC  
JA  
Typical Thermal Resistance  
Θ
ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C unless otherwise noted)  
C
CSHDD16  
-40C  
TYP MAX  
-60C  
TYP MAX  
-100C  
TYP MAX  
-200C  
TYP MAX UNITS  
SYMBOL  
TEST CONDITIONS  
I
V =Rated V  
-
50  
-
50  
-
50  
-
50  
20  
0.9  
1.2  
-
µA  
mA  
V
R
R
R
RRM  
RRM  
I
V =Rated V  
, T =100°C  
-
20  
-
20  
-
20  
-
R
C
V
I =8.0A  
-
-
0.7  
0.84  
-
-
-
0.75  
0.95  
-
-
-
0.8  
1.10  
-
-
-
F
F
F
V
I =16A  
V
F
C
V =4.0V, f=1.0MHz  
300  
300  
300  
300  
pF  
J
R
R6 (14-November 2012)  

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