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CSHDD8-100TR-13 PDF预览

CSHDD8-100TR-13

更新时间: 2024-11-16 21:19:39
品牌 Logo 应用领域
CENTRAL 功效二极管
页数 文件大小 规格书
2页 540K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 100V V(RRM), Silicon, D2PAK-3

CSHDD8-100TR-13 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:TO-263
包装说明:D2PAK-3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.33
其他特性:HIGH RELIABILITY应用:EFFICIENCY
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.85 VJESD-30 代码:R-PSSO-G2
JESD-609代码:e0最大非重复峰值正向电流:150 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:8 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:100 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

CSHDD8-100TR-13 数据手册

 浏览型号CSHDD8-100TR-13的Datasheet PDF文件第2页 
CSHDD8-40  
CSHDD8-60  
CSHDD8-100  
www.centralsemi.com  
SURFACE MOUNT  
SILICON SCHOTTKY RECTIFIER  
8 AMP, 40 THRU 100 VOLTS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CSHDD8-40  
Series types are Silicon Schottky Rectifiers designed  
for surface mount fast switching applications requiring  
a low forward voltage drop. To order devices on 24mm  
Tape and Reel ( 800/13” Reel ), add TR13 suffix to part  
number.  
MARKING: FULL PART NUMBER  
D2PAK CASE  
FEATURES:  
• High reliability  
• UL flammability classification 94V-O  
• Low forward voltage  
• High current capability  
• High surge capacity  
• Superior lot to lot consistency  
• Low power loss, high effeciency  
• High voltage  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
C
SYMBOL  
CSHDD8-40  
CSHDD8-60  
CSHDD8-100  
UNITS  
Peak Repetitive Reverse Voltage  
DC Blocking Voltage  
V
40  
40  
28  
60  
60  
100  
100  
70  
V
V
RRM  
V
R
RMS Reverse Voltage  
V
42  
V
R(RMS)  
Average Forward Current (T =100°C)  
C
I
8.0  
A
O
Peak Forward Surge Current, tp=8.3ms  
I
150  
10,000  
A
FSM  
dv/dt  
Critical Rate of Rise of Reverse Voltage  
V/µs  
Operating and Storage  
Junction Temperature  
T , T  
-65 to +150  
°C  
J
stg  
Typical Thermal Resistance  
Typical Thermal Resistance  
Θ
2.0  
50  
°C/W  
°C/W  
JC  
Θ
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
C
CSHDD8-40  
CSHDD8-60  
CSHDD8-100  
SYMBOL  
TEST CONDITIONS  
TYP  
MAX  
100  
15  
TYP  
MAX  
100  
15  
TYP  
MAX  
100  
15  
UNITS  
µA  
mA  
V
I
I
V =Rated V  
R RRM  
R
V =Rated V  
T =125°C  
C
R
R
RRM,  
V
V
V
V
I =8.0A  
0.65  
0.57  
0.84  
0.72  
0.75  
0.65  
0.95  
0.85  
0.85  
0.75  
1.10  
1.00  
F
F
F
F
F
I =8.0A, T =125°C  
V
F
C
I =16A  
V
F
I =16A, T =125°C  
V
F
C
C
V =4.0V, f=1.0MHz  
300  
300  
300  
pF  
J
R
R4 (17-February 2010)  

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