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CSHDD16-100ATR13 PDF预览

CSHDD16-100ATR13

更新时间: 2024-10-26 14:48:39
品牌 Logo 应用领域
CENTRAL 功效瞄准线二极管
页数 文件大小 规格书
2页 110K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 16A, 100V V(RRM), Silicon, D2PAK-3

CSHDD16-100ATR13 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Active零件包装代码:TO-263
包装说明:D2PAK-3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.78
Is Samacsys:N其他特性:LOW POWER LOSS, HIGH RELIABILITY
应用:EFFICIENCY外壳连接:ANODE
配置:COMMON ANODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PSSO-G2
JESD-609代码:e0最大非重复峰值正向电流:150 A
元件数量:2相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:16 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:100 V
表面贴装:YES技术:SCHOTTKY
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

CSHDD16-100ATR13 数据手册

 浏览型号CSHDD16-100ATR13的Datasheet PDF文件第2页 
TM  
CSHDD16-40A  
CSHDD16-60A  
CSHDD16-100A  
Central  
FEATURES:  
HIGH RELIABILITY  
Semiconductor Corp.  
SURFACE MOUNT  
SILICON SCHOTTKY RECTIFIERS  
DUAL, COMMON ANODE  
16 AMP, 40 THRU 100 VOLTS  
HIGH CURRENT CAPABILITY  
UL FLAMMABILITY CLASSIFICATION 94V-O  
LOW POWER LOSS, HIGH EFFICIENCY  
LOW FORWARD VOLTAGE  
HIGH SURGE CAPACITY  
2
D PAK  
!
Super Power  
SUPERIOR LOT TO LOT CONSISTENCY  
D2PAK CASE  
DESCRIPTION:  
HIGH VOLTAGE  
The CENTRAL SEMICONDUCTOR CSHDD16-40A Series types are Silicon Schottky Rectifiers  
designed for surface mount fast switching applications requiring a low forward voltage drop. To order  
devices on 24mm Tape and Reel ( 800/13" Reel ), add TR13 suffix to part number.  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
C
SYMBOL CSHDD16 CSHDD16 CSHDD16  
-40A  
-60A  
-100A  
UNITS  
Peak Repetitive Reverse Voltage  
DC Blocking Voltage  
V
V
V
40  
40  
26  
60  
60  
100  
100  
80  
V
V
RRM  
R
RMS Reverse Voltage  
42  
V
R(RMS)  
Average Forward Current (T =90°C)  
C
I
I
16  
A
O
Peak Forward Surge Current (8.3ms)  
150  
10,000  
A
FSM  
Critical Rate of Rise of Reverse Voltage dV/dt  
Operating and Storage  
V/µs  
Junction Temperature  
T ,T  
J
-65 to +150  
°C  
stg  
Typical Thermal Resistance  
Typical Thermal Resistance  
ΘJC  
ΘJA  
2.0  
50  
°C/W  
°C/W  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
C
CSHDD16  
-40A  
CSHDD16  
-60A  
CSHDD16  
-100A  
SYMBOL  
TEST CONDITIONS  
TYP MAX  
TYP MAX  
TYP MAX  
UNITS  
I
I
V =Rated V  
100  
15  
100  
15  
100  
15  
µA  
mA  
V
R
R
R
RRM  
RRM  
V =Rated V  
, T = 125°C  
C
R
V
V
V
V
I =8.0A  
0.65  
0.75  
0.65  
0.95  
0.85  
300  
0.85  
0.75  
1.10  
1.00  
300  
F
F
F
F
F
I =8.0A, T = 125°C  
0.57  
V
F
C
I =16A  
0.84  
V
F
I =16A, T = 125°C  
0.72  
V
F
C
C
V =4.0V, f=1.0MHz  
300  
pF  
J
R
R0 ( 31-August 2001)  

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