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CSD10H65 PDF预览

CSD10H65

更新时间: 2024-11-12 14:53:55
品牌 Logo 应用领域
江苏长电/长晶 - CJ /
页数 文件大小 规格书
5页 2008K
描述
TO-220-2L

CSD10H65 数据手册

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JIANGSU CHANGJING ELECTRONICS TECHNOLOGYCO., LTD  
TO-220-2L Plastic-Encapsulate Diode  
CSD10H65 Silicon Carbide Schottky Diode  
TO-220-2L  
MAIN CHARACTERISTICS  
IO  
10A(TC≤127)  
650V  
VRRM  
Tj  
175  
1.5V (@Tj=25)  
2.0V (@Tj=175)  
VF(typ)  
1
2
FEATURES  
1
1. CATHODE  
2. ANODE  
Zero Reverse Recovery Current  
Zero Forward Recovery Voltage  
Temperature-independent performance  
High-speed switching  
Low switching loss  
Low Leakage Current  
2
Application  
Industrial Power Supplies  
Power factorcorrection  
Motor drive traction  
EV charging station  
Solar Inverters  
MARKING  
CSD10H65 = Device code  
Solid dot = Green molding compound device  
if none, the normal device  
XXXX = Code  
CSD  
1 0H 65  
XXXX  
MAXIMUM RATINGS ( Tj=25 unless otherwise noted )  
Value  
Symbol  
Parameter  
Peak repetitive reverse voltage  
Unit  
VRRM  
VRWM  
VR  
Working peak reverse voltage  
DC blocking voltage  
650  
V
TC≤25  
21  
13  
A
A
TC≤100℃  
AverageForwardCurrent  
IF(AV)  
TC≤127  
10  
A
Non-Repetitive peak forward surge current (  
IFSM  
∫i2dt  
PD  
10ms half sine wave)  
56  
A
2
15.7  
66  
A2s  
W
(t =10ms)  
P
i t value  
Powerdissipation  
RΘJC  
Thermal Resistance From Junction to Case  
Junction temperature  
2.28  
-55~175  
-55~175  
/W  
T
j
Tstg  
Storage temperature  
www.jscj-elec.com  
Rev - 1.0  
1

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