Datasheet > CS9N20A8R

CS9N20A8R

更新时间： 2024-10-30 17:00:55

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	670K
描述
TO-220

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数据手册

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CS9N20A8R 数据手册

Silicon N-Channel Power MOSFET

CS9N20 A8R

○

General Description：

V_{D SS}

200

CS9N20 A8R, the silicon N-channel Enhanced

VDMOSFETs, is obtained by theself-aligned planar Technology

which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. The transistor

can be used in various power switching circuit for system

miniaturization and higher efficiency. The package form is

TO-220AB, which accords with theRoHS standard.

Features：

I_D

Ω

P_D(T_C=25℃)

R_{D S(O N)Typ}

0.24

 Fast Switching



Low ON Resistance(Rdson≤ 0.28

Ω)

 Low Gate Charge (TypicalData: 12.6nC)

 Low Reverse transfercapacitances(Typical:8.8pF)

 100% Single Pulse avalanche energy Test

Applications：

Power switch circuit of adaptor and charger.

Absolute（T_J= 25℃ unless otherwise specified）：

Parameter

Symbol

V_{D SS}

Rating

Units

Drain-to-Source Voltage

200

Continuous Drain Current T_C= 25 °C

I_D

Continuous Drain Current T_C= 100 °C

Pulsed Drain Current T_C= 25 °C

Gate-to-Source Voltage

5.4

I_{D M}

V_{G S}

±30

200

5.0

Single Pulse Avalanche Energy

E_{A S}

V/ns

Peak Diode Recovery dv/dt

dv/dt

Power Dissipation T_C= 25 °C

P_D

Derating Factor above 25°C

0.60

W/℃

℃

Op erating Junction and Storage Temperature Range

M aximum Temperature for Soldering

T_J，T_stg

150，–55 to 150

300

℃

T_L

W UXI C HINA RES O URC ES HUAJING MIC RO ELEC TRO NIC S C O ., LTD. Page 1 of 10

2018V01

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