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CS9N90AKRD-G PDF预览

CS9N90AKRD-G

更新时间: 2024-10-30 15:18:35
品牌 Logo 应用领域
华润微 - CRMICRO /
页数 文件大小 规格书
10页 375K
描述
TO-247

CS9N90AKRD-G 数据手册

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Silicon N-Channel Power MOSFET  
CS9N90 AKRD-G  
R
General Description  
VDSS  
900  
V
A
CS9N90 AKRD-G, the silicon N-channel Enhanced  
VDMOSFETs, is obtained by the self-aligned planar Technology  
which reduce the conduction loss, improve switching  
performance and enhance the avalanche energy. The transistor  
can be used in various power switching circuit for system  
miniaturization and higher efficiency. The package form is TO-247,  
which accords with the RoHS standard.  
ID  
9
PD(TC=25)  
RDS(ON)Typ  
250  
0.9  
W
Features  
l Fast Switching  
l Low ON Resistance(Rdson1.1)  
l Low Gate Charge (Typical Data: 57.9nC)  
l Low Reverse transfer capacitances(Typical: 11.3pF)  
l 100% Single Pulse avalanche energy Test  
l Halogen Free  
Applications:  
PC power and Inverter.  
AbsoluteTJ= 25unless otherwise specified:  
Parameter  
Symbol  
VDSS  
Rating  
Units  
Drain-to-Source Voltage  
900  
V
A
Continuous Drain Current TC = 25 °C  
Continuous Drain Current TC = 100 °C  
Pulsed Drain Current TC = 25 °C  
Gate-to-Source Voltage  
9
ID  
5.4  
A
a1  
36  
A
IDM  
VGS  
V
±30  
a2  
Single Pulse Avalanche Energy  
Peak Diode Recovery dv/dt  
1035  
mJ  
V/ns  
W
EAS  
a3  
5.0  
dv/dt  
Power Dissipation TC = 25 °C  
250  
PD  
Derating Factor above 25°C  
2
3000  
W/℃  
V
Gate source ESD (HBM-C= 100pF, R=1.5kΩ)  
Operating Junction and Storage Temperature Range  
Maximum Temperature for Soldering  
VESD(G-S)  
TJTstg  
TL  
15055 to 150  
300  
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10  
2020V01  

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