Datasheet > CS9N90FA9RD-G

CS9N90FA9RD-G

更新时间： 2024-10-30 15:19:27

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华润微 - CRMICRO		/
页数	文件大小	规格书
10页	361K
描述
TO-220F

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数据手册

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CS9N90FA9RD-G 数据手册

Silicon N-Channel Power MOSFET

CS9N90F A9RD-G

○

General Description：

V_DSS

900

CS9N90F A9RD-G, the silicon N-channel Enhanced

VDMOSFETs, is obtained by the self-aligned planar Technology

which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. The transistor

can be used in various power switching circuit for system

miniaturization and higher efficiency. The package form is

TO-220F which accords with the RoHS standard.

Features：

I_D

P_D(T_C=25℃)

R_DS(ON)Typ

0.9

Ω

l Fast Switching

l Low ON Resistance(Rdson≤1.1Ω)

l Low Gate Charge (Typical Data: 57.9nC)

l Low Reverse transfer capacitances(Typical: 11.3pF)

l 100% Single Pulse avalanche energy Test

l Halogen Free

Applications：

Power switch circuit of adaptor and charger.

Absolute（Tc= 25℃ unless otherwise specified）：

Parameter

Symbol

V_DSS

Rating

Units

Drain-to-Source Voltage

900

Continuous Drain Current

I_D

Continuous Drain Current T_C= 100 °C

Pulsed Drain Current

5.4

I_DM

Gate-to-Source Voltage

V_GS

±20

Single Pulse Avalanche Energy

Peak Diode Recovery dv/dt

1035

V/ns

E_AS

5.0

dv/dt

Power Dissipation

P_D

Derating Factor above 25°C

Gate source ESD (HBM-C= 100pF, R=1.5kΩ)

Operating Junction and Storage Temperature Range

0.328

W/℃

3000

V_ESD(G-S)

T_J，T_stg

150，–55 to 150

℃

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10

2021V01

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