CS8N50 A8R
R
○
16
21
14
7
250us Pulse Test
VDS=20V
12
8
+150℃
+25℃
+25℃
+150℃
4
0
0
2
4
6
8
10
0
0.2
7
0.4
0.6
0.8
1
1.2
Vgs , Gate to Source Voltage , Volts
Vsd , Source - Drain Voltage , Volts
Figure
Typical Body Diode Transfer Characteristics
Figure
6
Typical Transfer Characteristics
2.5
1.4
1.2
1.0
0.8
0.6
PULSE DURATION = 10μs
DUTY CYCLE= 0.5%MAX
VGS=10V ID=3.5A
PULSE DURATION = 10μs
DUTY CYCLE= 0.5%MAX
Tc =25 ℃
2.25
2
VGS=10V
1.75
1.5
1.25
1
0.75
0.5
0
2
4
6
8
-50
0
50
Tj, Junction temperature , C
100
150
Id , Drain Current , Amps
Figure
9
Typical Drian to Source on Resistance
vs Junction Temperature
Figure
8
Typical Drain to Source ON Resistance
vs Drain Current
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