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CS8N50A8R

更新时间: 2024-04-09 18:59:09
品牌 Logo 应用领域
华润微 - CRMICRO /
页数 文件大小 规格书
10页 270K
描述
TO-220

CS8N50A8R 数据手册

 浏览型号CS8N50A8R的Datasheet PDF文件第2页浏览型号CS8N50A8R的Datasheet PDF文件第3页浏览型号CS8N50A8R的Datasheet PDF文件第4页浏览型号CS8N50A8R的Datasheet PDF文件第6页浏览型号CS8N50A8R的Datasheet PDF文件第7页浏览型号CS8N50A8R的Datasheet PDF文件第8页 
CS8N50 A8R  
R
16  
21  
14  
7
250us Pulse Test  
VDS=20V  
12  
8
+150℃  
+25℃  
+25℃  
+150℃  
4
0
0
2
4
6
8
10  
0
0.2  
7
0.4  
0.6  
0.8  
1
1.2  
Vgs , Gate to Source Voltage , Volts  
Vsd , Source - Drain Voltage , Volts  
Figure  
Typical Body Diode Transfer Characteristics  
Figure  
6
Typical Transfer Characteristics  
2.5  
1.4  
1.2  
1.0  
0.8  
0.6  
PULSE DURATION = 10μs  
DUTY CYCLE= 0.5%MAX  
VGS=10V ID=3.5A  
PULSE DURATION = 10μs  
DUTY CYCLE= 0.5%MAX  
Tc =25 ℃  
2.25  
2
VGS=10V  
1.75  
1.5  
1.25  
1
0.75  
0.5  
0
2
4
6
8
-50  
0
50  
Tj, Junction temperature , C  
100  
150  
Id , Drain Current , Amps  
Figure  
9
Typical Drian to Source on Resistance  
vs Junction Temperature  
Figure  
8
Typical Drain to Source ON Resistance  
vs Drain Current  
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 5 of 10  
2015V01  

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