Datasheet > CS8N80FA9D

CS8N80FA9D

更新时间： 2024-03-03 10:09:58

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	231K
描述
TO-220F

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数据手册

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CS8N80FA9D 数据手册

Silicon N-Channel Power MOSFET

○

CS8N80F A9D

V_DSS

800

General Description：

I_D

CS8N80F A9D, the silicon N-channel Enhanced

VDMOSFETs, is obtained by the self-aligned planar

Technology which reduce the conduction loss, improve

switching performance and enhance the avalanche energy. The

transistor can be used in various power switching circuit for

system miniaturization and higher efficiency. The package form is

TO-220F, which accords with the RoHS standard.

Features：

P_D(T_C=25℃)

R_DS(ON)Typ

1.0

Ω

l Fast Switching

l ESD Improved Capability

l Low Gate Charge (Typical Data:49nC)

l Low Reverse transfer capacitances(Typical:14pF)

l 100% Single Pulse avalanche energy Test

Applications：

Power switch circuit of adaptor and charger.

Absolute（Tc= 25℃ unless otherwise specified）：

Parameter

Symbol

V_DSS

Rating

Units

Drain-to-Source Voltage

800

Continuous Drain Current

I_D

Continuous Drain Current T_C= 100 °C

Pulsed Drain Current

5.4

I_DM

Gate-to-Source Voltage

V_GS

±30

Single Pulse Avalanche Energy

Avalanche Energy ,Repetitive

Avalanche Current

350

E_AS

E_AR

3.3

I_AR

Peak Diode Recovery dv/dt

Power Dissipation

5.0

V/ns

dv/dt

P_D

Derating Factor above 25°C

Gate source ESD (HBM-C= 100pF, R=1.5kΩ)

Operating Junction and Storage Temperature Range

MaximumTemperature for Soldering

0.4

4000

W/℃

V_ESD(G-S)

T_J，T_stg

T_L

150，–55 to 150

300

℃

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 7 2016V01

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