Datasheet > CS8N65A3R-G

CS8N65A3R-G

更新时间： 2024-10-29 17:01:47

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	509K
描述
TO-251

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

CS8N65A3R-G 数据手册

Silicon N-Channel Power MOSFET

CS8N65 A3R-G

○

General Description：

V_DSS

650

CS8N65 A3R-G, the silicon N-channel Enhanced

VDMOSFETs, is obtained by the self-aligned planar Technology

which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. The transistor

can be used in various power switching circuit for system

miniaturization and higher efficiency. The package form is TO-251,

which accords with the RoHS standard.

I_D

P_D(T_C=25℃)

R_DS(ON)Typ

120

0.86

Ω

Features：

 Fast Switching



Low ON Resistance(Rdson≤1.0Ω)

 Low Gate Charge (Typical Data:29nC)

 Low Reverse transfer capacitances(Typical:6.6pF)

 100% Single Pulse avalanche energy Test

 Halogen Free

Applications：

Power switch circuit of adaptor and charger.

Absolute（Tc= 25℃ unless otherwise specified）：

Parameter

Symbol

V_DSS

Rating

Units

Drain-to-Source Voltage

650

Continuous Drain Current

I_D

Continuous Drain Current T_C= 100 °C

Pulsed Drain Current

I_DM

Gate-to-Source Voltage

V_GS

±30

Single Pulse Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation

500

V/ns

E_AS

5.0

dv/dt

120

0.96

P_D

Derating Factor above 25°C

Operating Junction and Storage Temperature Range

Maximum Temperature for Soldering

W/℃

℃

T_J，T_stg

150，–55 to 150

300

T_L

℃

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10

2016V01

12 3 4 5 6 7...10

中文翻译

下载PDF

与CS8N65A3R-G相关器件

型号	品牌	获取价格	描述	数据表
CS8N65A4R-G	CRMICRO	获取价格	TO-252
CS8N65A8H	CRMICRO	获取价格	TO-220
CS8N65ARR	CRMICRO	获取价格	TO-262
CS8N65FA9H	CRMICRO	获取价格	TO-220F
CS8N65FA9R-G	CRMICRO	获取价格	TO-220F
CS8N70ARR-G	CRMICRO	获取价格	TO-262
CS8N70FA9RD	CRMICRO	获取价格	TO-220F
CS8N70FA9R-G	CRMICRO	获取价格	TO-220F
CS8N80A8D	CRMICRO	获取价格	TO-220
CS8N80FA9D	CRMICRO	获取价格	TO-220F