Datasheet > CS62LS4008FI

CS62LS4008FI

更新时间： 2022-12-01 12:20:02

品牌	Logo	应用领域
其他 - ETC		静态存储器
页数	文件大小	规格书
11页	484K
描述
Low Power CMOS SRAM 512K X 8 Bits

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中文翻译

获取价格

数据手册

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CS62LS4008FI 数据手册

Low Power CMOS SRAM

512K X 8 Bits

UC62LS4008

-20/-25

ꢀDC ELECTRICAL CHARACTERISTICS (TA=0℃to 70℃)

Test Condition

Symbol

V_IL

Comment

MIN.

TYP.⁽¹⁾

MAX.

UNITS

Guaranteed Input Low

V_CC=2.4V

-0.5

0.8

Voltage⁽²⁾

Guaranteed Input High

Voltage⁽²⁾

V_IH

V_CC=3.6V

2.0

Vcc-0.2

I_L

Input Leakage Current

Output Leakage Current

Output Low Voltage

Output High Voltage

V_CC=3.6V V_IN=0V to V_CC

V_CC=3.6V CE\=V_IHor OE\=V_IH

V_IO=0V t V_CC

I_OL

V_OL

V_OH

I_CC

V_CC=3.6V, I_OL=2mA

2.4

0.4

V_CC=3.0V, I_OH=-1mA

Operating Power Supply

Current

CE\=V_IL,I_DQ=0mA, F=Fmax⁽³⁾

CE\=V_IH, V_IN=V_IHto V_IL

I_SB1

I_SB2

TTL Standby Current

CE\≧V_CC-0.2V, V_IN=V_CC-0.2V

to 0.2V

CMOS Standby Current

1. Typical characteristics are at TA = 25^oC.

2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.

3. Fmax = 1/tRC .

ꢀDATA RETENTION CHARACTERISTICS ( TA=0℃to 70℃)

Symbol

Comment

Test Condition

MIN.

1.2

TYP.⁽¹⁾

MAX.

UNITS

CE\≧V_CC- 0.2V

V_IN≧V_CC-0.2V or V_IN≦0.2V

CE\≧V_CC- 0.2V

V_IN≧V_CC-0.2V or V_IN≦0.2V

VCC to Data Retention

Data Retention Current

V_DR

0.1

I_CCDR

t_DR

Chip Deselect to Data

Retention Time

See Retention Waveform

(2)

Operation Recovery Time

t_R

T_RC

1. V_CC= 1.5V, TA = 25℃.

2. t_RC= Read Cycle Time

ꢀLOW VCC DATA RETENTION WAVEFORM⁽¹⁾(CE\ Controlled)

Data Retention Mode

V_DR>= 1. 2V

Vcc

t_CDR

VIH

t_R

VIH

CE >= V_CC- 0. 2V

U-Chip Technology Corp. LTD. .

Preliminary Rev.1.0

Reserves the right to modify document contents without notice.

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