Silicon N-Channel Power MOSFET
R
○
CS630 A8H
General Description:
VDSS
200
V
A
CS630 A8H, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220AB, which accords with the RoHS standard.
Features:
ID
9
PD(TC=25℃)
RDS(ON)Typ
83
W
Ω
0.23
l Fast Switching
l Low ON Resistance(Rdson≤0.28Ω)
l Low Gate Charge (Typical Data:13nC)
l Low Reverse transfer capacitances(Typical:10pF)
l 100% Single Pulse avalanche energy Test
Applications:
Automotive、DC Motor Control and Class D Amplifier.
Absolute(Tc= 25℃ unless otherwise specified):
Parameter
Symbol
VDSS
Rating
Units
Drain-to-Source Voltage
200
V
A
Continuous Drain Current
9
ID
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
5.5
A
a1
36
A
IDM
Gate-to-Source Voltage
VGS
V
±30
a2
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
460
mJ
mJ
A
EAS
a1
50
EAR
a1
3.2
IAR
a3
Peak Diode Recovery dv/dt
Power Dissipation
5.0
V/ns
W
dv/dt
83
0.67
PD
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
W/℃
℃
TJ,Tstg
150,–55 to 150
300
TL
℃
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.
Page 1 of 10
2015V01