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CS62LS4008FI PDF预览

CS62LS4008FI

更新时间: 2022-12-01 12:20:02
品牌 Logo 应用领域
其他 - ETC 静态存储器
页数 文件大小 规格书
11页 484K
描述
Low Power CMOS SRAM 512K X 8 Bits

CS62LS4008FI 数据手册

 浏览型号CS62LS4008FI的Datasheet PDF文件第1页浏览型号CS62LS4008FI的Datasheet PDF文件第3页浏览型号CS62LS4008FI的Datasheet PDF文件第4页浏览型号CS62LS4008FI的Datasheet PDF文件第5页浏览型号CS62LS4008FI的Datasheet PDF文件第6页浏览型号CS62LS4008FI的Datasheet PDF文件第7页 
Low Power CMOS SRAM  
512K X 8 Bits  
UC62LS4008  
-20/-25  
PIN DESCRIPTION  
Name  
A0 – A18  
CE\  
Type  
Input  
Input  
Function  
Address inputs for selecting one of the 524,288 x 8 bit words in the RAM  
CE\ is active LOW. Chip enable must be active when data read from or write to the device. If chip  
enable is not active, the device is deselected and not in a standby power down mode. The DQ  
pins will be in high impedance state when the device is deselected.  
The Write enable input is active LOW and controls read and write operations. With the chip  
selected, when WE\ is HIGH and OE\ is LOW, output data will be present on the DQ pins, when  
WE\ is LOW, the data present on the DQ pins will be written into the selected memory location.  
The output enable input is active LOW. If the output enable is active while the chip is selected  
and the write enable is inactive, data will be present on the DQ pins and they will be enabled.  
The DQ pins will be in the high impedance state when OE\ is inactive.  
These 8 bi-directional ports are used to read data from or write data into the RAM.  
Power Supply  
WE\  
OE\  
Input  
Input  
DQ0 – DQ7  
Vcc  
I/O  
Power  
Power  
Ground  
Gnd  
TRUTH TABLE  
Mode  
Not Selected  
Output Disabled  
Read  
WE\  
CE\  
H
OE\  
X
I/O state  
High Z  
High Z  
DOUT  
Vcc Current  
X
H
H
L
ISB,ISB1  
ICC  
L
H
L
L
ICC  
Write  
L
X
DIN  
ICC  
ABSOLUTE MAXIMUM RATINGS(1) OPERATING RANGE  
AMBIENT  
TEMPERATURE  
SYMBOL  
VTERM  
TBIAS  
PARAMETER  
RATING  
UNIT  
RANGE  
VCC  
Terminal Voltage with  
Respect to GND  
-0.5 to VCC+0.5  
V
0to 70℃  
Commercial  
3.0V ~ 3.6V  
Temperature Under Bias  
Storage Temperature  
Power Dissipation  
-40 to 125  
CAPACITANCE(1)(TA=25,f=1.0MHz)  
TSTG  
-50 to 150  
PARAMETER  
PT  
1
W
SYMBOL  
CONDITIONS MAX.  
UNIT  
Input  
IOUT  
DC Output Current  
20  
mA  
CIN  
VIN=0V  
VDQ  
6
8
pF  
Capacitance  
Input/Output  
Capacitance  
1. Stresses greater than those listed under ABSOLUTE  
MAXIMUM RATINGS may cause permanent damage to the  
device. This is a stress rating only and functional operation of  
the device at these or any other conditions above those  
indicated in the operational sections of this specification is not  
implied. Exposure to absolute maximum rating conditions for  
extended periods may affect reliability.  
CDQ  
pF  
1. This parameter is guaranteed and not 100% tested.  
U-Chip Technology Corp. LTD. .  
Preliminary Rev.1.0  
Reserves the right to modify document contents without notice.  
PAGE 2  

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