Datasheet > CS5N06AE-1

CS5N06AE-1

更新时间： 2024-03-03 10:11:33

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	809K
描述
SOP-8D

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数据手册

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CS5N06AE-1 数据手册

CS5N06 AE-1

○

100

Note:

1.V_DS=10V

2.250us Pulse Test

Tj=150℃

Tj=25℃

0.1

Tj=25℃

0.1

0.01

0.001

0.2

0.4

0.6

0.8

1.2

V_GS,Gate-to-Source Voltage[V]

_SD，Source-to-Drain Voltage[V]

Figure 7 TypicalBody Diode Transfer

Characteristics

Figure 6 TypicalTransfer Characteristics

1.8

1.6

1.4

1.2

PULSED TEST

V_GS= 10V

I_D= 5A

PULSED TEST

T = 25℃

V_GS= 4.5V

0.8

0.6

0.4

V_GS= 10V

-50

100

150

I_D,Drain Current,A

T_J,Junction Temperature(℃)

Figure 9. Normalized On Resistance vs

Junction Temperature

Figure 8. Drain-to-Source On Resistance vs

Drain Current

1.2

1.081.2

V_GS= V_DS

I_D= 250μA

1.1

1.06

1.15

0.9

0.8

0.7

0.6

0.5

0.4

1.04

1.1

1.02

1.05

0.98

0.95

0.96

0.940.9

-5-0100

-50 0

5500

100 100 150

210500

-50

100

150

T_J,Junction Temperature(℃)

Figure10. Normalized Threshold Voltage vs

Junction Temperature

Figure 11. Normalized Breakdown Voltage vs

Junction Temperature

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.

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