Datasheet > CS5N20A4

CS5N20A4

更新时间： 2024-11-19 15:18:43

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	716K
描述
TO-252(或DPAK)

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

CS5N20A4 数据手册

Silicon N-Channel Power MOSFET

CS5N20 A4

○

General Description：

V_DSS

200

CS5N20 A4, the silicon N-channel Enhanced

VDMOSFETs, is obtained by the self-aligned planar Technology

which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. The transistor

can be used in various power switching circuit for system

miniaturization and higher efficiency. The package form is

TO-252, which accords with the RoHS standard..

Features：

I_D

4.8

P_D(T_C=25℃)

R_DS(ON)Typ

Ω

0.49

 Fast Switching



Low ON Resistance(Rdson≤0.65

Ω)

 Low Gate Charge (Typical Data:7nC)

 Low Reverse transfer capacitances(Typical:8pF)

 100% Single Pulse avalanche energy Test

Applications：

Power switch circuit of adaptor and charger.

Absolute（T_J= 25℃ unless otherwise specified）：

Parameter

Symbol

V_DSS

Rating

Units

Drain-to-Source Voltage

200

Continuous Drain Current T_C= 25 °C

Continuous Drain Current T_C= 100 °C

Pulsed Drain Current T_C= 25 °C

Gate-to-Source Voltage

4.8

I_D

3.4

19.2

I_DM

V_GS

±30

Single Pulse Avalanche Energy

Peak Diode Recovery dv/dt

125

V/ns

E_AS

dv/dt

Power Dissipation T_C= 25 °C

Derating Factor above 25°C

0.32

P_D

W/℃

℃

Operating Junction and Storage Temperature Range

T_J，T_stg

150，–55 to 150

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10

2019V01

12 3 4 5 6 7...10

中文翻译

下载PDF

与CS5N20A4相关器件

型号	品牌	获取价格	描述	数据表
CS5N20FA9	CRMICRO	获取价格	TO-220F
CS5N50A4R	CRMICRO	获取价格	TO-252
CS5N50A8R	CRMICRO	获取价格	TO-220
CS5N50FA9R	CRMICRO	获取价格	TO-220F
CS5N60A3H	CRMICRO	获取价格	TO-251
CS5N60A4H	CRMICRO	获取价格	TO-252
CS5N60A7H	CRMICRO	获取价格	TO-126F
CS5N60A8H	ETC	获取价格	无锡华润华晶
CS5N60A8H	CRMICRO	获取价格	TO-220
CS5N60FA9H	CRMICRO	获取价格	TO-220F