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CS5N10AE-G-1 PDF预览

CS5N10AE-G-1

更新时间: 2024-04-09 19:02:17
品牌 Logo 应用领域
华润微 - CRMICRO /
页数 文件大小 规格书
10页 802K
描述
SOP-8D

CS5N10AE-G-1 数据手册

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Silicon N-Channel Power MOSFET  
CS5N10 AE-G-1  
R
General Description  
VDSS  
100  
4.4  
2.4  
54  
V
CS5N10 AE-G-1, the silicon N-channel Enhanced  
VDMOSFETs, is obtained by the high density Trench  
technology which reduce the conduction loss, improve switching  
performance and enhance the avalanche energy. This device is  
suitable for use as a load switch and PWM applications. The  
package form is SOP-8, which accords with the RoHS standard.  
Features  
ID  
A
W
PD  
RDS(ON)Typ  
mΩ  
Fast Switching  
Low ON Resistance(Rdson≤67 m)  
Low Gate Charge  
Low Reverse transfer capacitances  
100% Single Pulse avalanche energy Test  
Halogen Free  
Applications:  
Power switch circuit of adaptor and charger.  
AbsoluteTA= 25unless otherwise specified)  
Parameter  
Symbol  
VDSS  
Rating  
Units  
Drain-to-Source Voltage  
100  
V
A
Continuous Drain Current  
Continuous Drain Current TA = 100 °C  
Pulsed Drain Current  
4.4  
ID  
2.8  
A
a1  
17.6  
A
IDM  
Gate-to-Source Voltage  
VGS  
±20  
46.9  
V
a2  
Avalanche Energy  
mJ  
W
EAS  
Power Dissipation  
2.4  
PD  
Derating Factor above 25°C  
Operating Junction and Storage Temperature Range  
0.019  
W/℃  
TJTstg  
15055 to 150  
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10  
2020V01  

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