Datasheet > CS38N30AN

CS38N30AN

更新时间： 2024-09-20 17:01:39

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华润微 - CRMICRO		/
页数	文件大小	规格书
10页	359K
描述
TO-3P(N)

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CS38N30AN 数据手册

Silicon N-Channel Power MOSFET

CS38N30 AN

○

General Description：

V_DSS

300

38.5

290

CS38N30 AN, the silicon N-channel Enhanced

VDMOSFETs, is obtained by the self-aligned planar Technology

which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. The transistor

can be used in various power switching circuit for system

miniaturization and higher efficiency. The package form is

TO-3P（N）, which accords with the RoHS standard..

I_D

P_D(T_C=25℃)

R_DS(ON)Typ

Ω

0.045

Features：

l Fast Switching

l Low ON Resistance(Rdson≤0.085Ω)

l Low Gate Charge (Typical Data:123nC)

l Low Reverse transfer capacitances(Typical:82pF)

l 100% Single Pulse avalanche energy Test

Applications：

Power switch circuit of electric welder.

Absolute（Tc= 25℃ unless otherwise specified）：

Parameter

Symbol

V_DSS

Rating

Units

Drain-to-Source Voltage

300

Continuous Drain Current

38.5

I_D

Continuous Drain Current T_C= 100 °C

Pulsed Drain Current

24.5

154

I_DM

Gate-to-Source Voltage

V_GS

±30

Single Pulse Avalanche Energy

Avalanche Energy ,Repetitive

Avalanche Current

1500

E_AS

E_AR

38.5

I_AR

Peak Diode Recovery dv/dt

Power Dissipation

5.0

V/ns

dv/dt

290

2.33

P_D

Derating Factor above 25°C

Operating Junction and Storage Temperature Range

Maximum Temperature for Soldering

W/℃

℃

T_J，T_stg

150，–55 to 150

300

T_L

℃

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.

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