Datasheet > CS15N04AEP-G

CS15N04AEP-G

更新时间： 2024-09-16 15:19:35

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	454K
描述
SOP-8

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数据手册

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CS15N04AEP-G 数据手册

Silicon N-Channel Trench MOSFET

CS15N04 AEP-G

○

General Description：

V_DSS

3.1

I_D

CS15N04 AEP-G, the silicon N-channel Enhanced

VDMOSFETs, is obtained by advanced trench Technology

which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. The transistor

can be used in various power switching circuit for system

miniaturization and higher efficiency. The package form is

SOP-8, which accords with the RoHS standard.

CS15N04AEP-G is halogen free.

P_D(T_C=25℃)

_DS(ON)Typ（10V）

mΩ

Features：

l Fast Switching

l Low ON Resistance (Rdson≤13mΩ)

l Low Reverse transfer capacitances(Typical:115pF)

l 100% Single Pulse avalanche energy Test

l Halogen free

Applications：

Power switch circuit of adaptor and charger.

Absolute（T_A= 25℃ unless otherwise specified）：

Parameter

Rating

Units

Symbol

V_DSS

Drain-to-Source Voltage

Continuous Drain Current

Continuous Drain Current T_A= 100 °C

Pulsed Drain Current

I_D

I_DM

V_GS

Gate-to-Source Voltage

±20

190

3.1

0.025

E_AS

Single Pulse Avalanche Energy

Power Dissipation

P_D

Derating Factor above 25°C

W/°C

Operating Junction and Storage Temperature

Range

T_J，T_stg

–55 to 150

°C

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.

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