Datasheet > CRTB360N06L-G

CRTB360N06L-G

更新时间： 2024-03-03 10:11:27

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	1273K
描述
SOT-223

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中文翻译

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数据手册

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CRTB360N06L-G 数据手册

Silicon N-Channel Power MOSFET

CRTB360N06L-G

General Description

：

V_DSS

CRTB360N06L-G, the silicon N-channel Enhanced

VDMOSFETs, is obtained by the high density Trench technology

which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. The transistor

can be used in various power switching circuit for system

miniaturization and higher efficiency. The package form is

SOT-223, which accords with the Halogen Free standard.

I_D

P_D(T_a=25

℃

)

2.6

R_{DS(ON) Typ@Vgs=10V}

R_{DS(ON) Typ@Vgs=4.5V}

mΩ

Features

：

l Fast Switching

l Low ON Resistance

l Low Gate Charge

l Low Reverse transfer capacitances

l 100% Single Pulse avalanche energy Test

l Halogen Free

Applications

：

Power switch circuit of adaptor and charger.

Synchronus Rectification in DC/DC Converters

Absolute

Symbol

V_DSS

（

TA= 25

℃ unless otherwise specified）：

Parameter

Rating

Units

Drain-to-Source Voltage

Continuous Drain Current T_A= 25 °C

Continuous Drain Current T_A= 100 °C

Pulsed Drain Current T_A= 25 °C

Gate-to-Source Voltage

I_D

4.5

I_DM

V_GS

Single Pulse Avalanche Energy T_A= 25 °C

Power Dissipation

56.2

2.6

E_AS

P_D

Derating Factor above 25 ℃

0.021

℃

Operating Junction and Storage Temperature Range

T_J

，

T_stg

150

，

–55 to 150

℃

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10

2021V02

12 3 4 5 6 7...10

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