Document Number: MRF6V13250H
Rev. 0, 6/2011
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
MRF6V13250HR3
MRF6V13250HSR3
RF Power transistors designed for applications operating at 1300 MHz.
These devices are suitable for use in pulsed and CW applications.
•
Typical Performance: VDD = 50 Volts, IDQ = 100 mA
P
(W)
f
G
(dB)
η
(%)
IRL
(dB)
out
ps
D
Signal Type
(MHz)
1300 MHz, 250 W, 50 V
LATERAL N--CHANNEL
RF POWER MOSFETs
Pulsed (200 μsec,
10% Duty Cycle)
250 Peak
1300
22.7
57.0
-- 1 8
•
Typical Performance: VDD = 50 Volts, IDQ = 10 mA, TC = 25°C
P
(W)
f
G
(dB)
η
(%)
IRL
(dB)
out
ps
D
Signal Type
(MHz)
CW
230 CW
1300
21.0
55.0
-- 1 7
•
•
Capable of Handling a Load Mismatch of 10:1 VSWR, @ 50 Vdc, 1300 MHz
at all Phase Angles
CASE 465--06, STYLE 1
NI--780
•
250 Watts Pulsed Peak Power, 10% Duty Cycle, 200 μsec
MRF6V13250HR3
CW Capable
Features
•
•
•
•
•
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 50 VDD Operation
Characterized from 20 V to 50 V for Extended Power Range
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
CASE 465A--06, STYLE 1
NI--780S
MRF6V13250HSR3
•
•
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.
For R5 Tape and Reel options, see p. 12.
Table 1. Maximum Ratings
Rating
Symbol
Value
--0.5, +120
--6.0, +10
-- 65 to +150
150
Unit
Vdc
Vdc
°C
Drain--Source Voltage
V
DSS
Gate--Source Voltage
V
GS
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
T
stg
T
C
°C
(1,2)
T
J
225
°C
Total Device Dissipation @ T = 25°C
P
476
W
C
D
Derate above 25°C
2.38
W/°C
Table 2. Thermal Characteristics
(2,3)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
°C/W
Pulsed: Case Temperature 65°C, 250 W Pulsed, 200 μsec Pulse Width, 10% Duty
Cycle, 50 Vdc, I = 100 mA, 1300 MHz
CW: Case Temperature 77°C, 235 W CW, 50 Vdc, I
Z
R
θ
JC
0.07
0.42
θ
DQ
JC
= 10 mA, 1300 MHz
DQ
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2011. All rights reserved.
MRF6V13250HR3 MRF6V13250HSR3
RF Device Data
Freescale Semiconductor
1