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CRCW120610R0JNEA PDF预览

CRCW120610R0JNEA

更新时间: 2024-09-16 12:51:31
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飞思卡尔 - FREESCALE 晶体电阻器晶体管PC
页数 文件大小 规格书
20页 1270K
描述
RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs

CRCW120610R0JNEA 数据手册

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Document Number: MRFE6VP8600H  
Rev. 1, 9/2011  
Freescale Semiconductor  
Technical Data  
RF Power LDMOS Transistors  
High Ruggedness N--Channel  
MRFE6VP8600HR6  
MRFE6VP8600HR5  
MRFE6VP8600HSR6  
MRFE6VP8600HSR5  
Enhancement--Mode Lateral MOSFETs  
Optimized for broadband operation from 470 to 860 MHz. Device has an  
integrated input matching network for better power distribution. These devices  
are ideally suited for use in analog or digital television transmitters.  
Typical Narrowband Performance: VDD = 50 Volts, IDQ = 1400 mA,  
Channel Bandwidth = 8 MHz, Input Signal PAR = 9.5 dB @ 0.01%  
Probability on CCDF. ACPR measured in 7.61 MHz Signal Bandwidth @  
±4 MHz Offset with an Integration Bandwidth of 4 kHz.  
470--860 MHz, 600 W, 50 V  
LDMOS BROADBAND  
RF POWER TRANSISTORS  
P
(W)  
f
G
η
(%)  
ACPR  
(dBc)  
IRL  
(dB)  
out  
ps  
D
Signal Type  
(MHz) (dB)  
DVB--T (8k OFDM)  
125 Avg.  
860 19.3  
30.0  
--60.5  
-- 1 2  
Typical Pulsed Broadband Performance: VDD = 50 Volts, IDQ = 1400 mA,  
Pulsed Width = 100 μsec, Duty Cycle = 10%  
P
(W)  
f
G
η
D
out  
ps  
Signal Type  
(MHz)  
(dB)  
19.3  
20.0  
18.8  
(%)  
47.1  
53.1  
48.9  
CASE 375D--05, STYLE 1  
NI--1230  
Pulsed  
600 Peak  
470  
650  
860  
MRFE6VP8600HR6  
Features  
Capable of Handling >65:1 VSWR through all Phase Angles @ 50 Vdc,  
860 MHz, DVB--T (8k OFDM) 240 Watts Avg. Output Power (3 dB Input  
Overdrive from Rated Pout  
)
CASE 375E--04, STYLE 1  
NI--1230S  
MRFE6VP8600HSR6  
Exceptional Efficiency for Class AB Analog or Digital Television Operation  
Full Performance across Complete UHF TV Spectrum, 470--860 MHz  
Capable of 600 Watt CW Output Power with Adequate Thermal Management  
Integrated Input Matching  
Extended Negative Gate--Source Voltage Range of --6.0 V to +10 V  
Improves Class C Performance, e.g. in a Doherty Peaking Stage  
PARTS ARE PUSH--PULL  
Enables Fast, Easy and Complete Shutdown of the Amplifier  
Characterized from 20 V to 50 V for Extended Operating Range for use  
with Drain Modulation  
Excellent Thermal Characteristics  
RoHS Compliant  
In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel.  
R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel.  
Gate 1  
Gate 2  
Drain 1  
Drain 2  
3
4
1
2
Table 1. Maximum Ratings  
Rating  
(Top View)  
Symbol  
Value  
Unit  
Note: The backside of the package is the  
source terminal for the transistor.  
Drain--Source Voltage  
V
--0.5, +130  
--6.0, +10  
--65 to +150  
150  
Vdc  
Vdc  
°C  
DSS  
Gate--Source Voltage  
V
GS  
Storage Temperature Range  
Case Operating Temperature  
T
Figure 1. Pin Connections  
stg  
T
°C  
C
D
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
1052  
5.26  
W
W/°C  
C
(1,2)  
Operating Junction Temperature  
T
J
225  
°C  
1. Continuous use at maximum temperature will affect MTTF.  
2. MTTF calculator available at http://www.freescale.com/rf. Select Software &  
Tools/Development Tools/Calculators to access MTTF calculators by product.  
© Freescale Semiconductor, Inc., 2011. All rights reserved.  

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