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CR3CM-12AB PDF预览

CR3CM-12AB

更新时间: 2024-11-01 14:41:31
品牌 Logo 应用领域
三菱 - MITSUBISHI 局域网栅极
页数 文件大小 规格书
6页 79K
描述
Silicon Controlled Rectifier, 4.7A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-202

CR3CM-12AB 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.84Is Samacsys:N
外壳连接:ANODE配置:SINGLE
最大直流栅极触发电流:0.05 mAJEDEC-95代码:TO-202
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
认证状态:Not Qualified最大均方根通态电流:4.7 A
断态重复峰值电压:600 V重复峰值反向电压:600 V
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE触发设备类型:SCR
Base Number Matches:1

CR3CM-12AB 数据手册

 浏览型号CR3CM-12AB的Datasheet PDF文件第2页浏览型号CR3CM-12AB的Datasheet PDF文件第3页浏览型号CR3CM-12AB的Datasheet PDF文件第4页浏览型号CR3CM-12AB的Datasheet PDF文件第5页浏览型号CR3CM-12AB的Datasheet PDF文件第6页 
MITSUBISHI SEMICONDUCTOR THYRISTOR  
CR3CM  
LOW POWER USE  
NON-INSULATED TYPE, GLASS PASSIVATION TYPE  
Dimensions  
CR3CM  
OUTLINE DRAWING  
in mm  
10 MAX  
0.5  
4
φ3.2±0.1  
TYPE NAME @  
VOLTAGE  
CLASS  
1.2±0.1  
0.8  
0.8  
0.5  
1.5 MIN  
2.5 2.5  
Measurement point of  
case temperature  
1 2 3  
10 MAX  
24  
CATHODE  
ANODE  
GATE  
1
2
3
4
• IT (AV) ...........................................................................3A  
• VDRM ..............................................................400V/600V  
• IGT .........................................................................200µA  
3
ANODE  
1
TO-202  
APPLICATION  
TV sets, strobe flasher, ignitors, gas ignitor, static switch, other general purpose control applications  
MAXIMUM RATINGS  
1  
Voltage class  
Symbol  
Parameter  
Unit  
8
12  
VRRM  
Repetitive peak reverse voltage  
Non-repetitive peak reverse voltage  
DC reverse voltage  
400  
500  
320  
400  
320  
600  
720  
480  
600  
480  
V
V
V
V
V
VRSM  
VR (DC)  
VDRM  
Repetitive peak off-state voltage  
DC off-state voltage  
VD (DC)  
Symbol  
Parameter  
RMS on-state current  
Average on-state current  
Surge on-state current  
Conditions  
Ratings  
4.7  
Unit  
A
IT (RMS)  
IT (AV)  
ITSM  
Commercial frequency, sine half wave, 180° conduction, Tc=50°C  
3.0  
A
60Hz sine half wave 1 full cycle, peak value, non-repetitive  
90  
A
Value corresponding to 1 cycle of half wave 60Hz, surge on-state  
current  
2
2
2
I t  
I t for fusing  
33  
A s  
PGM  
PG (AV)  
VFGM  
VRGM  
IFGM  
Tj  
Peak gate power dissipation  
Average gate power dissipation  
Peak gate forward voltage  
Peak gate reverse voltage  
Peak gate forward current  
Junction temperature  
0.5  
W
W
V
0.1  
6
6
V
0.3  
A
–40 ~ +110  
–40 ~ +125  
1.6  
°C  
°C  
g
Tstg  
Storage temperature  
Weight  
Typical value  
1. With Gate-to-cathode resistance RGK=1k.  
Feb.1999  

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