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CR05AS-8C PDF预览

CR05AS-8C

更新时间: 2024-01-18 07:33:31
品牌 Logo 应用领域
瑞萨 - RENESAS 栅极
页数 文件大小 规格书
6页 87K
描述
SILICON CONTROLLED RECTIFIER,400V V(DRM),500MA I(T),SOT-89

CR05AS-8C 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:compliant风险等级:5.84
最大直流栅极触发电流:0.1 mA最大直流栅极触发电压:0.8 V
最大维持电流:3 mA最大漏电流:0.1 mA
通态非重复峰值电流:10 A最大通态电压:1.9 V
最大通态电流:500 A最高工作温度:125 °C
最低工作温度:-40 °C断态重复峰值电压:400 V
子类别:Silicon Controlled Rectifiers表面贴装:YES
触发设备类型:SCRBase Number Matches:1

CR05AS-8C 数据手册

 浏览型号CR05AS-8C的Datasheet PDF文件第1页浏览型号CR05AS-8C的Datasheet PDF文件第3页浏览型号CR05AS-8C的Datasheet PDF文件第4页浏览型号CR05AS-8C的Datasheet PDF文件第5页浏览型号CR05AS-8C的Datasheet PDF文件第6页 
MITSUBISHI SEMICONDUCTOR THYRISTOR  
CR05AS  
LOW POWER USE  
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE  
Dimensions  
CR05AS  
OUTLINE DRAWING  
in mm  
4.4±0.1  
1.5±0.1  
1.6±0.2  
0.5±0.07  
0.4±0.07  
+0.03  
–0.05  
0.4  
1.5±0.1 1.5±0.1  
(Back side)  
CATHODE  
ANODE  
GATE  
• IT (AV) ........................................................................0.5A  
• VDRM ..............................................................200V/400V  
• IGT .........................................................................100µA  
SOT-89  
APPLICATION  
Solid state relay, strobe flasher, ignitor, hybrid IC  
MAXIMUM RATINGS  
Voltage class  
Symbol  
Parameter  
Unit  
4 (marked “CB”)  
8 (marked “CD”)  
VRRM  
Repetitive peak reverse voltage  
Non-repetitive peak reverse voltage  
DC reverse voltage  
200  
300  
160  
200  
160  
400  
500  
320  
400  
320  
V
V
V
V
V
VRSM  
VR (DC)  
VDRM  
1  
1  
Repetitive peak off-state voltage  
DC off-state voltage  
VD (DC)  
Symbol  
Parameter  
RMS on-state current  
Average on-state current  
Surge on-state current  
Conditions  
Ratings  
0.79  
0.5  
Unit  
A
IT (RMS)  
IT (AV)  
ITSM  
2  
Commercial frequency, sine half wave, 180° conduction, Ta=57°C  
A
60Hz sine half wave 1 full cycle, peak value, non-repetitive  
10  
A
Value corresponding to 1 cycle of half wave 60Hz, surge on-state  
current  
2
2
2
I t  
I t for fusing  
0.4  
A s  
PGM  
PG (AV)  
VFGM  
VRGM  
IFGM  
Tj  
Peak gate power dissipation  
Average gate power dissipation  
Peak gate forward voltage  
Peak gate reverse voltage  
Peak gate forward current  
Junction temperature  
0.1  
W
W
V
0.01  
6
6
0.1  
V
A
–40 ~ +125  
–40 ~ +125  
48  
°C  
°C  
mg  
Tstg  
Storage temperature  
Weight  
Typical value  
1. With Gate-to-cathode resistance RGK=1kΩ  
Jan.2000  

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