Datasheet > CQDD-12NTR13PBFREE

CQDD-12NTR13PBFREE

更新时间： 2024-11-27 05:16:23

品牌	Logo	应用领域
CENTRAL		三端双向交流开关
页数	文件大小	规格书
2页	399K
描述
TRIAC, 800V V(DRM), 12A I(T)RMS,

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数据手册

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CQDD-12NTR13PBFREE 数据手册

CQDD-12M

CQDD-12N

www.centralsemi.com

SURFACE MOUNT

12 AMP SILICON TRIAC

600 THRU 800 VOLTS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CQDD-12M series

type is an Epoxy Molded Silicon Triac designed for full

wave AC control applications featuring gate triggering

in all four (4) quadrants.

MARKING: FULL PART NUMBER

D²PAK CASE

MAXIMUM RATINGS: (T =25°C unless otherwise noted)

SYMBOL

CQDD-12M CQDD-12N UNITS

Peak Repetitive Off-State Voltage

600

800

DRM

RMS On-State Current (T =90°C)

1.0

4.0

T(RMS)

Peak One Cycle Surge, t=8.3ms

I²t Value for Fusing, t=8.3ms

Peak Gate Power, tp=10μs

A²s

TSM

I²t

Average Gate Power Dissipation

Peak Gate Current, tp=10μs

Peak Gate Voltage, tp=10μs

Critical Rate of Rise of On-State Current Repetitive, f=60Hz

Operating Junction Temperature

Storage Temperature

G(AV)

di/dt

A/μs

°C

-40 to +125

-40 to +150

°C

stg

Thermal Resistance

°C/W

Thermal Resistance

2.7

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

μA

Rated V

500

DRM

, T =125°C

μA

DRM

V =12V, R =10Ω, QUAD I, II, III

9.9

V =12V, R =10Ω, QUAD IV

24.3

14.1

1.10

2.10

1.33

I =100mA

V =12V, R =10Ω, QUAD I, II, III

1.50

2.50

1.50

V =12V, R =10Ω, QUAD IV

=17A, tp=380μs

dv/dt

V = / V

, R =∞, T =125°C

V/μs

DRM GK

R2 (12-February 2010)

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