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CQDD-16MPBFREE PDF预览

CQDD-16MPBFREE

更新时间: 2024-11-26 13:07:03
品牌 Logo 应用领域
CENTRAL 触发装置三端双向交流开关
页数 文件大小 规格书
2页 76K
描述
4 Quadrant Logic Level TRIAC,

CQDD-16MPBFREE 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:,Reach Compliance Code:compliant
风险等级:5.76JESD-609代码:e3
峰值回流温度(摄氏度):NOT SPECIFIED端子面层:Matte Tin (Sn)
处于峰值回流温度下的最长时间:NOT SPECIFIED触发设备类型:4 QUADRANT LOGIC LEVEL TRIAC
Base Number Matches:1

CQDD-16MPBFREE 数据手册

 浏览型号CQDD-16MPBFREE的Datasheet PDF文件第2页 
TM  
Central  
CQDD-16M  
CQDD-16N  
Semiconductor Corp.  
16 AMP TRIAC  
600 THRU 800 VOLTS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CQDD-16M  
series type is an Epoxy Molded Silicon Triac  
designed for full wave AC control applications  
featuring gate triggering in all four (4) quadrants.  
MARKING CODE: FULL PART NUMBER  
D2PAK CASE  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
C
SYMBOL  
CQDD  
-16M  
CQDD  
-16N  
UNITS  
Peak Repetitive Off-State Voltage  
V
I
I
600  
800  
V
A
A
A2s  
W
W
A
DRM  
T(RMS)  
TSM  
RMS On-State Current (T =90°C)  
16  
110  
50  
C
Peak One Cycle Surge (t=8.3ms)  
I2t Value for Fusing (t=8.3ms)  
Peak Gate Power (tp=10µs)  
Average Gate Power Dissipation  
Peak Gate Current (tp=10µs)  
Peak Gate Voltage (tp=10µs)  
Critical Rate of Rise of On-State Current  
Repetitive (f=60Hz)  
I2t  
P
P
I
40  
GM  
G (AV)  
GM  
1.0  
6.0  
16  
V
V
GM  
di/dt  
10  
A/µs  
°C  
°C  
°C/W  
°C/W  
Storage Temperature  
Junction Temperature  
Thermal Resistance  
Thermal Resistance  
T
T
Θ
Θ
-40 to +150  
-40 to +125  
60  
stg  
J
JA  
JC  
2.3  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
C
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
10  
2.0  
25  
75  
UNITS  
µA  
I
I
I
I
I
Rated V  
Rated V  
DRM  
DRM  
GT  
GT  
H
DRM  
DRM  
, T =125°C  
V =12V, R =10Ω, QUAD I, II, III  
V =12V, R =10Ω, QUAD IV  
mA  
mA  
mA  
mA  
V
V
V
V/µs  
C
10.9  
55.2  
9.8  
0.97  
1.51  
1.35  
D
L
D
T
L
I =100mA  
25  
V
V
V
V =12V, R =10Ω, QUAD I, II, III  
V =12V, R =10Ω, QUAD IV  
1.50  
2.50  
1.60  
GT  
GT  
TM  
D
L
D
TM  
L
I
=22.5A, tp=380µs  
2
dv/dt  
V = / V  
, R =∞, T =125°C  
10  
3
D
DRM GK  
C
R1 (24-September 2004)  

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