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CQDD-25MBKPBFREE PDF预览

CQDD-25MBKPBFREE

更新时间: 2023-03-15 00:00:00
品牌 Logo 应用领域
CENTRAL 三端双向交流开关栅极
页数 文件大小 规格书
2页 399K
描述
TRIAC, 600V V(DRM), 25A I(T)RMS,

CQDD-25MBKPBFREE 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:,Reach Compliance Code:compliant
风险等级:5.84关态电压最小值的临界上升速率:6 V/us
最大直流栅极触发电流:60 mA最大直流栅极触发电压:2.5 V
最大维持电流:50 mA最大漏电流:2 mA
最高工作温度:125 °C最低工作温度:-40 °C
最大均方根通态电流:25 A断态重复峰值电压:600 V
子类别:TRIACs表面贴装:YES
触发设备类型:TRIAC

CQDD-25MBKPBFREE 数据手册

 浏览型号CQDD-25MBKPBFREE的Datasheet PDF文件第2页 
CQDD-25M  
CQDD-25N  
www.centralsemi.com  
SURFACE MOUNT  
25 AMP SILICON TRIAC  
600 THRU 800 VOLTS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CQDD-25M series  
type is an Epoxy Molded Silicon Triac designed for full  
wave AC control applications featuring gate triggering  
in all four (4) quadrants.  
MARKING: FULL PART NUMBER  
D2PAK CASE  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
SYMBOL  
CQDD-25M  
CQDD-25N  
UNITS  
V
C
Peak Repetitive Off-State Voltage  
V
600  
800  
DRM  
RMS On-State Current (T =90°C)  
C
I
25  
A
T(RMS)  
Peak One Cycle Surge, t=8.3ms  
I2t Value for Fusing, t=8.3ms  
Peak Gate Power, tp=10μs  
I
150  
94  
A
A2s  
TSM  
I2t  
P
40  
W
GM  
Average Gate Power Dissipation  
Peak Gate Current, tp=10μs  
Peak Gate Voltage, tp=10μs  
Critical Rate of Rise of On-State Current Repetitive, f=60Hz  
Operating Junction Temperature  
Storage Temperature  
P
1.0  
10  
W
G (AV)  
I
A
GM  
V
16  
V
GM  
di/dt  
10  
A/μs  
°C  
T
-40 to +125  
-40 to +150  
60  
J
T
°C  
stg  
Thermal Resistance  
Θ
°C/W  
°C/W  
JA  
JC  
Thermal Resistance  
Θ
1.7  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
C
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
10  
UNITS  
μA  
I
I
I
I
I
Rated V  
Rated V  
DRM  
DRM  
GT  
DRM  
, T =125°C  
2.0  
mA  
mA  
mA  
mA  
V
DRM  
C
V =12V, R =10Ω, QUAD I, II, III  
11.1  
28.2  
18.4  
1.03  
1.74  
30  
D
L
V =12V, R =10Ω, QUAD IV  
60  
GT  
D
L
I =100mA  
50  
H
T
V
V
V
V =12V, R =10Ω, QUAD I, II, III  
1.50  
2.50  
1.80  
GT  
GT  
TM  
D
L
V =12V, R =10Ω, QUAD IV  
V
D
L
I
=35A, tp=380μs  
2
V
TM  
dv/dt  
V = / V  
, R =, T =125°C  
6.0  
V/μs  
3
D
DRM GK  
C
R2 (12-February 2010)  

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