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CQDD-16MBK PDF预览

CQDD-16MBK

更新时间: 2024-11-26 13:00:19
品牌 Logo 应用领域
CENTRAL 触发装置三端双向交流开关
页数 文件大小 规格书
2页 76K
描述
4 Quadrant Logic Level TRIAC, 600V V(DRM), 16A I(T)RMS, PLASTIC, D2PAK-3

CQDD-16MBK 技术参数

生命周期:Obsolete零件包装代码:D2PAK
包装说明:SMALL OUTLINE, R-PSSO-G2针数:3
Reach Compliance Code:compliantHTS代码:8541.30.00.80
风险等级:5.74外壳连接:MAIN TERMINAL 2
配置:SINGLE关态电压最小值的临界上升速率:10 V/us
最大直流栅极触发电流:75 mA最大直流栅极触发电压:2.5 V
最大维持电流:25 mAJESD-30 代码:R-PSSO-G2
JESD-609代码:e0最大漏电流:2 mA
元件数量:1端子数量:2
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE认证状态:Not Qualified
最大均方根通态电流:16 A断态重复峰值电压:600 V
子类别:TRIACs表面贴装:YES
端子面层:TIN LEAD端子形式:GULL WING
端子位置:SINGLE触发设备类型:4 QUADRANT LOGIC LEVEL TRIAC
Base Number Matches:1

CQDD-16MBK 数据手册

 浏览型号CQDD-16MBK的Datasheet PDF文件第2页 
TM  
Central  
CQDD-16M  
CQDD-16N  
Semiconductor Corp.  
16 AMP TRIAC  
600 THRU 800 VOLTS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CQDD-16M  
series type is an Epoxy Molded Silicon Triac  
designed for full wave AC control applications  
featuring gate triggering in all four (4) quadrants.  
MARKING CODE: FULL PART NUMBER  
D2PAK CASE  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
C
SYMBOL  
CQDD  
-16M  
CQDD  
-16N  
UNITS  
Peak Repetitive Off-State Voltage  
V
I
I
600  
800  
V
A
A
A2s  
W
W
A
DRM  
T(RMS)  
TSM  
RMS On-State Current (T =90°C)  
16  
110  
50  
C
Peak One Cycle Surge (t=8.3ms)  
I2t Value for Fusing (t=8.3ms)  
Peak Gate Power (tp=10µs)  
Average Gate Power Dissipation  
Peak Gate Current (tp=10µs)  
Peak Gate Voltage (tp=10µs)  
Critical Rate of Rise of On-State Current  
Repetitive (f=60Hz)  
I2t  
P
P
I
40  
GM  
G (AV)  
GM  
1.0  
6.0  
16  
V
V
GM  
di/dt  
10  
A/µs  
°C  
°C  
°C/W  
°C/W  
Storage Temperature  
Junction Temperature  
Thermal Resistance  
Thermal Resistance  
T
T
Θ
Θ
-40 to +150  
-40 to +125  
60  
stg  
J
JA  
JC  
2.3  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
C
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
10  
2.0  
25  
75  
UNITS  
µA  
I
I
I
I
I
Rated V  
Rated V  
DRM  
DRM  
GT  
GT  
H
DRM  
DRM  
, T =125°C  
V =12V, R =10Ω, QUAD I, II, III  
V =12V, R =10Ω, QUAD IV  
mA  
mA  
mA  
mA  
V
V
V
V/µs  
C
10.9  
55.2  
9.8  
0.97  
1.51  
1.35  
D
L
D
T
L
I =100mA  
25  
V
V
V
V =12V, R =10Ω, QUAD I, II, III  
V =12V, R =10Ω, QUAD IV  
1.50  
2.50  
1.60  
GT  
GT  
TM  
D
L
D
TM  
L
I
=22.5A, tp=380µs  
2
dv/dt  
V = / V  
, R =∞, T =125°C  
10  
3
D
DRM GK  
C
R1 (24-September 2004)  

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