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CQDD-12NLEADFREE PDF预览

CQDD-12NLEADFREE

更新时间: 2024-11-26 15:29:51
品牌 Logo 应用领域
CENTRAL 三端双向交流开关
页数 文件大小 规格书
2页 399K
描述
4 Quadrant Logic Level TRIAC, 800V V(DRM), 12A I(T)RMS, PLASTIC, D2PAK-3

CQDD-12NLEADFREE 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:D2PAK
包装说明:SMALL OUTLINE, R-PSSO-G2针数:3
Reach Compliance Code:not_compliantHTS代码:8541.30.00.80
风险等级:5.18外壳连接:MAIN TERMINAL 2
配置:SINGLEJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified最大均方根通态电流:12 A
断态重复峰值电压:800 V表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:10
触发设备类型:4 QUADRANT LOGIC LEVEL TRIACBase Number Matches:1

CQDD-12NLEADFREE 数据手册

 浏览型号CQDD-12NLEADFREE的Datasheet PDF文件第2页 
CQDD-12M  
CQDD-12N  
www.centralsemi.com  
SURFACE MOUNT  
12 AMP SILICON TRIAC  
600 THRU 800 VOLTS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CQDD-12M series  
type is an Epoxy Molded Silicon Triac designed for full  
wave AC control applications featuring gate triggering  
in all four (4) quadrants.  
MARKING: FULL PART NUMBER  
D2PAK CASE  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
SYMBOL  
CQDD-12M CQDD-12N UNITS  
C
Peak Repetitive Off-State Voltage  
V
600  
800  
V
A
DRM  
RMS On-State Current (T =90°C)  
C
I
12  
80  
27  
40  
1.0  
4.0  
16  
10  
T(RMS)  
Peak One Cycle Surge, t=8.3ms  
I2t Value for Fusing, t=8.3ms  
Peak Gate Power, tp=10μs  
I
A
A2s  
TSM  
I2t  
P
W
GM  
Average Gate Power Dissipation  
Peak Gate Current, tp=10μs  
Peak Gate Voltage, tp=10μs  
Critical Rate of Rise of On-State Current Repetitive, f=60Hz  
Operating Junction Temperature  
Storage Temperature  
P
W
G(AV)  
I
A
GM  
V
V
GM  
di/dt  
A/μs  
°C  
T
-40 to +125  
-40 to +150  
60  
J
T
°C  
stg  
Thermal Resistance  
Θ
°C/W  
°C/W  
JA  
JC  
Thermal Resistance  
Θ
2.7  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
C
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
μA  
I
I
I
I
I
Rated V  
Rated V  
10  
500  
20  
DRM  
DRM  
GT  
DRM  
, T =125°C  
μA  
DRM  
C
V =12V, R =10Ω, QUAD I, II, III  
9.9  
mA  
mA  
mA  
V
D
L
V =12V, R =10Ω, QUAD IV  
24.3  
14.1  
1.10  
2.10  
1.33  
50  
GT  
D
L
I =100mA  
25  
H
T
V
V
V
V =12V, R =10Ω, QUAD I, II, III  
1.50  
2.50  
1.50  
GT  
GT  
TM  
D
L
V =12V, R =10Ω, QUAD IV  
V
D
L
I
=17A, tp=380μs  
2
V
TM  
dv/dt  
V = / V  
, R =, T =125°C  
10  
V/μs  
3
D
DRM GK  
C
R2 (12-February 2010)  

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