Datasheet > CQ89-2M_10

CQ89-2M_10

更新时间： 2024-11-24 09:30:39

品牌	Logo	应用领域
CENTRAL		三端双向交流开关
页数	文件大小	规格书
2页	286K
描述
SURFACE MOUNT 2 AMP SILICON TRIAC 600 THRU 800 VOLTS

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中文翻译

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数据手册

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CQ89-2M_10 数据手册

CQ89-2M

CQ89-2N

www.centralsemi.com

SURFACE MOUNT

2 AMP SILICON TRIAC

600 THRU 800 VOLTS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CQ89-2M series

type is an Epoxy Molded Silicon Triac designed for full

wave AC control applications featuring gate triggering

in all four (4) quadrants.

MARKING: FULL PART NUMBER

SOT-89 CASE

MAXIMUM RATINGS: (T =25°C unless otherwise noted)

SYMBOL

CQ89-2M CQ89-2N

600 800

UNITS

Peak Repetitive Off-State Voltage

DRM

RMS On-State Current (T =50°C)

2.0

T(RMS)

Peak One Cycle Surge, t=10ms

I²t Value for Fusing, t=10ms

Peak Gate Power, tp=10μs

Average Gate Power Dissipation

Peak Gate Current, tp=10μs

Peak Gate Voltage, tp=10μs

Operating Junction Temperature

Storage Temperature

A²s

TSM

I²t

2.0

3.0

0.2

1.2

8.0

G(AV)

-40 to +125

-40 to +150

180

°C

stg

Thermal Resistance

°C/W

Thermal Resistance

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

μA

Rated V

=1KΩ

5.0

200

5.00

8.00

5.0

DRM

DRM, GK

, R =1KΩ, T =125°C

μA

DRM

DRM GK

V =12V, QUAD I, II, III

1.35

3.75

1.2

V =12V, QUAD IV

=1KΩ

V =12V, QUAD I, II, III, IV

1.1

1.8

=2.0A, tp=380μs

1.50

1.7

1.75

2.0

=3.0A, tp=380μs

dv/dt

V = / V

T =125°C

2.5

V/μs

DRM, C

R1 (12-February 2010)

中文翻译

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