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CQ89-2NBK PDF预览

CQ89-2NBK

更新时间: 2024-11-24 13:01:23
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CENTRAL 三端双向交流开关
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CQ89-2NBK 数据手册

 浏览型号CQ89-2NBK的Datasheet PDF文件第2页 
TM  
Central  
CQ89-2M  
CQ89-2N  
Semiconductor Corp.  
2.0 AMP TRIAC  
600 THRU 800 VOLTS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CQ89-2M  
series type is an Epoxy Molded Silicon Triac  
designed for full wave AC control applications  
featuring gate triggering in all four (4) quadrants.  
MARKING CODE: FULL PART NUMBER  
SOT-89 CASE  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
C
SYMBOL  
CQ89  
-2M  
600  
CQ89  
-2N  
800  
UNITS  
V
A
A
A2s  
W
W
A
V
°C  
°C  
°C/W  
°C/W  
Peak Repetitive Off-State Voltage  
V
DRM  
T(RMS)  
TSM  
RMS On-State Current (T =50°C)  
I
I
I2t  
2.0  
20  
C
Peak One Cycle Surge (t=10ms)  
I2t Value for Fusing (t=10ms)  
Peak Gate Power (tp=10µs)  
Average Gate Power Dissipation  
Peak Gate Current (tp=10µs)  
Peak Gate Voltage (tp=10µs)  
Storage Temperature  
2.0  
3.0  
0.2  
1.2  
8.0  
P
P
GM  
G(AV)  
GM  
I
V
GM  
stg  
J
T
T
Θ
Θ
-40 to +150  
-40 to +125  
180  
Junction Temperature  
Thermal Resistance  
Thermal Resistance  
JA  
JC  
90  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
C
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
5.0  
200  
5.00  
8.00  
5.0  
1.8  
1.75  
2.0  
UNITS  
µA  
µA  
mA  
mA  
mA  
V
V
V
V/µs  
I
I
I
I
I
Rated V  
Rated V  
R
=1KΩ  
DRM  
DRM  
GT  
GT  
H
DRM, GK  
, R =1KΩ, T =125°C  
V =12V, QUAD I, II, III  
DRM GK  
C
1.35  
3.75  
1.2  
1.1  
1.50  
1.7  
D
V =12V, QUAD IV  
D
R
=1KΩ  
GK  
V
V
V
V =12V, QUAD I, II, III, IV  
GT  
TM  
TM  
D
TM  
TM  
I
I
=2.0A, tp=380µs  
=3.0A, tp=380µs  
2
dv/dt  
V = / V  
T =125°C  
DRM, C  
2.5  
3
D
R0 (10-May 2004)  

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