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CPH3340

更新时间： 2024-01-05 00:24:19
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
4页 36K
描述
TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,5A I(D),SOT-23

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CPH3340 技术参数

生命周期：Obsolete包装说明：,
Reach Compliance Code：compliant风险等级：5.83
Is Samacsys：N配置：Single
最大漏极电流 (Abs) (ID)：5 AFET 技术：METAL-OXIDE SEMICONDUCTOR
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
极性/信道类型：P-CHANNEL最大功率耗散 (Abs)：1.2 W
子类别：Other Transistors表面贴装：YES
Base Number Matches：1

CPH3340 数据手册

 浏览型号CPH3340的Datasheet PDF文件第2页浏览型号CPH3340的Datasheet PDF文件第3页浏览型号CPH3340的Datasheet PDF文件第4页 
Ordering number : ENA0090A  
SANYO Sem iconductors  
DATA S HEET  
P-Channel Silicon MOSFET  
General-Purpose Switching Device  
Applications  
CPH3340  
Features  
• Low ON-resistance.  
• Ultrahigh-speed switching.  
•
2.5V drive.  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Drain-to-Source Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
V
--20  
±10  
-- 5  
DSS  
GSS  
Gate-to-Source Voltage  
Drain Current (DC)  
V
V
I
A
D
Drain Current (Pulse)  
Allowable Power Dissipation  
Channel Temperature  
Storage Temperature  
I
PW≤10µs, duty cycle≤1%  
Mounted on a ceramic board (900mm2✕0.8mm)  
--20  
1.2  
150  
A
DP  
P
W
°C  
°C  
D
Tch  
Tstg  
--55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
--20  
max  
Drain-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
I
=--1mA, V =0V  
V
µA  
µA  
V
(BR)DSS  
D GS  
I
V
V
V
V
=--20V, V =0V  
GS  
--1  
±10  
--1.4  
DSS  
GSS  
DS  
GS  
DS  
DS  
I
=±8V, V =0V  
DS  
V (off)  
GS  
=--10V, I =--1mA  
--0.4  
5.2  
D
Forward Transfer Admittance  
yfs  
=--10V, I =--2.5A  
8.6  
32  
S
D
R
DS  
(on)1  
I
I
=--2.5A, V =--4V  
GS  
45  
62  
mΩ  
mΩ  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
D
Static Drain-to-Source On-State Resistance  
R
DS  
(on)2  
=--1A, V =--2.5V  
GS  
44  
1875  
289  
276  
21  
D
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-ON Delay Time  
Rise Time  
Ciss  
V
V
V
=--10V, f=1MHz  
=--10V, f=1MHz  
=--10V, f=1MHz  
DS  
DS  
DS  
Coss  
Crss  
t (on)  
d
See specified Test Circuit.  
See specified Test Circuit.  
See specified Test Circuit.  
See specified Test Circuit.  
t
r
93  
Turn-OFF Delay Time  
Fall Time  
t (off)  
d
178  
130  
t
f
Marking : YP  
Continued on next page.  
Any and all SANYO Semiconductor products described or contained herein do not have specifications  
that can handle applications that require extremely high levels of reliability, such as life-support systems,  
aircraft's control systems, or other applications whose failure can be reasonably expected to result in  
serious physical and/or material damage. Consult with your SANYO Semiconductor representative  
nearest you before usingany SANYO Semiconductor products described or contained herein in such  
applications.  
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products  
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition  
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor  
products described or contained herein.  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
O1806 MS IM / 92005PE MS IM TB-00001606 No. A0090-1/4  
1234

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