5秒后页面跳转
捷配首页

Datasheet > CPH3348
CPH3348 PDF预览

CPH3348

更新时间： 2024-02-16 04:11:14
品牌 Logo 应用领域
三洋 - SANYO 开关通用开关
页数 文件大小 规格书
4页 52K
描述
P-Channel Silicon MOSFET General-Purpose Switching Device Applications

阅读下载

中文翻译

获取价格

CPH3348 技术参数

生命周期：Transferred包装说明：SMALL OUTLINE, R-PDSO-G3
针数：3Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.31
Is Samacsys：N配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：12 V最大漏极电流 (Abs) (ID)：3 A
最大漏极电流 (ID)：3 A最大漏源导通电阻：0.115 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-G3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：P-CHANNEL
最大功率耗散 (Abs)：1 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子形式：GULL WING端子位置：DUAL
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

CPH3348 数据手册

 浏览型号CPH3348的Datasheet PDF文件第2页浏览型号CPH3348的Datasheet PDF文件第3页浏览型号CPH3348的Datasheet PDF文件第4页 
Ordering number : ENA0922  
SANYO Sem iconductors  
DATA S HEET  
P-Channel Silicon MOSFET  
General-Purpose Switching Device  
Applications  
CPH3348  
Features  
•
Ultrahigh-speed switching.  
•
1.8V drive  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Drain-to-Source Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
V
--12  
±10  
-- 3  
DSS  
GSS  
Gate-to-Source Voltage  
Drain Current (DC)  
V
V
I
A
D
Drain Current (Pulse)  
Allowable Power Dissipation  
Channel Temperature  
Storage Temperature  
I
PW≤10µs, duty cycle≤1%  
Mounted on a ceramic board (1200mm2✕0.8mm)  
--12  
1.0  
150  
A
DP  
P
W
°C  
°C  
D
Tch  
Tstg  
--55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
--12  
max  
Drain-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
I
=--1mA, V =0V  
V
µA  
µA  
V
(BR)DSS  
D GS  
I
V
V
V
V
=--12V, V =0V  
GS  
--10  
±10  
--1.4  
DSS  
GSS  
DS  
GS  
DS  
DS  
I
=±8V, V =0V  
DS  
V (off)  
GS  
=--6V, I =--1mA  
--0.4  
2.7  
D
Forward Transfer Admittance  
yfs  
=--6V, I =--1.5A  
4.5  
54  
S
D
R
(on)1  
I
D
I
D
I
D
=--1.5A, V =--4.5V  
GS  
70  
115  
215  
mΩ  
mΩ  
mΩ  
DS  
DS  
DS  
Static Drain-to-Source On-State Resistance  
R
R
(on)2  
(on)3  
=--0.8A, V =--2.5V  
GS  
80  
=--0.3A, V =--1.8V  
GS  
125  
Marking : WE  
Continued on next page.  
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to  
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,  
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be  
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace  
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety  
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case  
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee  
thereof. If you should intend to use our products for applications outside the standard applications of our  
customer who is considering such use and/or outside the scope of our intended standard applications, please  
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our  
customer shall be solely responsible for the use.  
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate  
the performance, characteristics, and functions of the described products in the independent state, and are not  
guarantees of the performance, characteristics, and functions of the described products as mounted in the  
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent  
device, the customer should always evaluate and test devices mounted in the customer  
equipment.  
's products or  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
91907PE TI IM TC-00000901 No. A0922-1/4  
1234

中文翻译

下载PDF

与CPH3348相关器件

型号 品牌 获取价格 描述 数据表
CPH3348_12 SANYO

获取价格

 		General-Purpose Switching Device Applications
CPH3348-TL-E SANYO

获取价格

 		General-Purpose Switching Device Applications
CPH3350 SANYO

获取价格

 		General-Purpose Switching Device Applications
CPH3350_12 SANYO

获取价格

 		General-Purpose Switching Device Applications
CPH3350-TL-H SANYO

获取价格

 		General-Purpose Switching Device Applications
CPH3350-TL-W ONSEMI

获取价格

 		P 沟道，功率 MOSFET，-20V，-3A，83mΩ
CPH3351 ONSEMI

获取价格

 		1800mA, 60V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE, SC-95, SC-96, SOT-457, 3 P
CPH3351 SANYO

获取价格

 		P-Channel Silicon MOSFET General-Purpose Switching Device Applications
CPH3351_12 SANYO

获取价格

 		General-Purpose Switching Device Applications
CPH3351TL ONSEMI

获取价格

 		1800mA, 60V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE, SC-95, SC-96, SOT-457, 3 P

与CPH3348相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证