CPDH3V3UP

更新时间： 2024-11-29 06:48:27

品牌	Logo	应用领域
上华 - COMCHIP		瞬态抑制器二极管电视光电二极管 PC
页数	文件大小	规格书
4页	164K
描述
SMD ESD Protection Diode

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中文翻译

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技术参数
数据手册

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CPDH3V3UP 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	1.74
Samacsys Confidence：	4	Samacsys Status：	Released
Samacsys PartID：	349542	Samacsys Pin Count：	2
Samacsys Part Category：	TVS Diode (Uni-directional)	Samacsys Package Category：	Other
Samacsys Footprint Name：	SOD-523	Samacsys Released Date：	2018-09-26 14:42:17
Is Samacsys：	N	最大钳位电压：	8 V
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE	极性：	UNIDIRECTIONAL
最大重复峰值反向电压：	3.3 V	子类别：	Transient Suppressors
表面贴装：	YES	Base Number Matches：	1

CPDH3V3UP 数据手册

SMD ESD Protection Diode

SMD Diodes Specialist

CPDH3V3UP

RoHS Device

Features

IEC61000-4-2 (ESD)±15kV(Contact),±20kV(Air).

SOD-523

0.051(1.30)

0.043(1.10)

Working voltage: 3.3V

Low leakage current.

0.033(0.85)

0.030(0.75)

0.014(0.35)

0.010(0.25)

Low operating and clamping voltages.

Mechanical data

0.067(1.70)

0.059(1.50)

Case: SOD-523 standard package ,molded plastic.

Terminals: Gold plated, solderable per

MIL-STD-750,method 2026.

0.031(0.77)

0.020(0.51)

0.006(0.15)

0.003(0.08)

Mounting position: Any

0.008(0.20)

REF

0.003(0.07)

0.001(0.01)

Weight: 0.0012 gram(approx.).

Dimensions in inches and (millimeter)

Circuit Diagram

Maximum Rating (at TA=25 C unless otherwise noted)

Symbol

Parameter

Value

Unit

Peak pulse power ( tp = 8/20 us)

PPP

Peak pulse current ( tp = 8/20 us)

IPP

ESD per IEC 61000-4-2(Air)

ESD per IEC 61000-4-2(Contact)

±20

±15

VESD

Operating temperature

Storage temperature

-55 to +125

TSTG

Electrical Characteristics (at TA=25 C unless otherwise noted)

Symbol

Typ

0.05

Parameter

Reverse stand-off voltage

Punch-through voltage

Snap-back voltage

Conditions

Min

Max Unit

VRWM

VPT

VSB

3.3

IPT = 2uA

3.5

2.8

ISB = 50mA

Reverse leakage current

VRWM = 3.3V

0.5

5.5

8.0

2.4

IPP = 1 A, tp=8/20us

IPP = 5 A, tp=8/20us

IPPR = 1 A, tp=8/20us

Clamping voltage

Reverse clamping voltage

Junction capacitance

VCR

VR = 0 V, f = 1MHz

REV:C

Page 1

QW-BP022

Comchip Technology CO., LTD.

12 3 4

中文翻译

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