Datasheet > CPD83V-CMPD2838-WS

CPD83V-CMPD2838-WS

更新时间： 2023-01-03 09:46:08

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CPD83V-CMPD2838-WS 数据手册

PROCESS CPD83V

Switching Diode

High Speed Switching Diode Chip

PROCESS DETAILS

Process

EPITAXIAL PLANAR

11 x 11 MILS

Die Size

Die Thickness

7.1 MILS

Anode Bonding Pad Area

Top Side Metalization

Back Side Metalization

3.35 x 3.35 MILS

Al - 30,000Å

Au-As - 13,000Å

GEOMETRY

GROSS DIE PER 5 INCH WAFER

137,880

PRINCIPAL DEVICE TYPES

CMPD914

CMPD4448

1N914

1N914B

1N4148

1N4448

1N4154

1N4454

BACKSIDE CATHODE

CMPD2836

CMPD2838

CMPD7000

R5 (22-March 2010)

www.centralsemi.com

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型号	品牌	获取价格	描述	数据表
CPD83V-CMPD7000	CENTRAL	获取价格	Rectifier Diode,
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CPD83V-CMPD914	CENTRAL	获取价格	250mA,100V Bare die,11.027 X 11.027 mils,Diode-Switching
CPD83V-CMPD914-CT	CENTRAL	获取价格	Rectifier Diode,
CPD83V-CMPD914-WN	CENTRAL	获取价格	Rectifier Diode,
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