Datasheet > CP727V-CMPTA64

CP727V-CMPTA64

更新时间： 2024-04-09 18:59:15

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
4页	458K
描述
500mA,30V Bare die,22.800 X 22.800 mils,Transistor-Small Signal (<=1A)

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CP727V-CMPTA64 数据手册

CP727V-CMPTA64

PNP - Darlington Transistor Die

0.5 Amp, 30 Volt

www.centralsemi.com

The CP727V-CMPTA64 is a silicon PNP Darlington power transistor designed for high gain

ampliﬁer applications.

MECHANICAL SPECIFICATIONS:

Die Size

22.8 x 22.8 MILS

7.1 MILS

Die Thickness

Base Bonding Pad Size

Emitter Bonding Pad Size

Top Side Metalization

Back Side Metalization

Scribe Alley Width

Wafer Diameter

4.7 x 4.7 MILS

Al-Si – 17,000Å

Au – 9,000Å

1.97 mils

5 INCHES

Gross Die Per Wafer

33,085

BACKSIDE COLLECTOR

MAXIMUM RATINGS: (T =25°C)

Collector-Base Voltage

SYMBOL

UNITS

CBO

Collector-Emitter Voltage

CES

EBO

Emitter-Base Voltage

Continuous Collector Current

Operating and Storage Junction Temperature

0.5

T , T

-65 to +150

°C

stg

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

=30V

100

CBO

=10V

100

EBO

I =100µA

CES

CE(SAT)

BE(ON)

I =100mA, I =0.1mA

1.5

2.0

=5.0V, I =100mA

=5.0V, I =10mA

10K

20K

125

=5.0V, I =100mA

=5.0V, I =10mA, f=100MHz

MHz

R0 (3-August 2016)

12 3 4

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