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CP311 PDF预览

CP311

更新时间: 2024-10-28 03:26:23
品牌 Logo 应用领域
CENTRAL 晶体晶体管高压
页数 文件大小 规格书
2页 215K
描述
Power Transistor NPN High Voltage Transistor Chip

CP311 数据手册

 浏览型号CP311的Datasheet PDF文件第2页 
TM  
PROCESS CP311  
Power Transistor  
Central  
Semiconductor Corp.  
NPN High Voltage Transistor Chip  
PROCESS DETAILS  
Process  
Die Size  
EPITAXIAL PLANAR  
109.5 x 109.5 MILS  
Die Thickness  
9.0 MILS  
Base Bonding Pad Area  
Emitter Bonding Pad Area  
Top Side Metalization  
Back Side Metalization  
23.6 x 15.4 MILS  
37.8 x 15.8 MILS  
Al - 30,000Å  
Ti / Ni / Ag - 11,300Å  
GEOMETRY  
GROSS DIE PER 4 INCH WAFER  
900  
PRINCIPAL DEVICE TYPES  
CJDD3110  
145 Adams Avenue  
Hauppauge, NY 11788 USA  
Tel: (631) 435-1110  
Fax: (631) 435-1824  
www.centralsemi.com  
R2 (15- September 2003)  

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