Datasheet > CP312-CJD200

CP312-CJD200

更新时间： 2024-11-22 14:54:15

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
4页	686K
描述
25V,5A,12.5W Bare die,70.870 X 70.870 mils,Transistor-Bipolar Power (>1A)

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CP312-CJD200 数据手册

PROCESS CP312

Power Transistor

NPN - Amp/Switch Transistor Chip

PROCESS DETAILS

Process

EPITAXIAL PLANAR

70 x 70 MILS

Die Size

Die Thickness

9.0 MILS

Base Bonding Pad Area

Emitter Bonding Pad Area

Top Side Metalization

Back Side Metalization

11.4 x 18.1 MILS

13.8 x 23.6 MILS

Al - 30,000Å

Ti/Ni/Ag - 11,300Å

GEOMETRY

GROSS DIE PER 4 INCH WAFER

2,230

PRINCIPAL DEVICE TYPES

CZT3120

R4 (22-March 2010)

www.centralsemi.com

12 3 4

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