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CP312 PDF预览

CP312

更新时间: 2024-10-28 03:26:23
品牌 Logo 应用领域
CENTRAL 晶体开关放大器晶体管
页数 文件大小 规格书
2页 213K
描述
Power Transistor NPN - Amp/Switch Transistor Chip

CP312 数据手册

 浏览型号CP312的Datasheet PDF文件第2页 
TM  
PROCESS CP312  
Power Transistor  
Central  
Semiconductor Corp.  
NPN - Amp/Switch Transistor Chip  
PROCESS DETAILS  
Process  
Die Size  
EPITAXIAL PLANAR  
70 x 70 MILS  
Die Thickness  
9.0 MILS  
Base Bonding Pad Area  
Emitter Bonding Pad Area  
Top Side Metalization  
Back Side Metalization  
11.4 x 18 MILS  
13.7 x 23.6 MILS  
Al - 30,000Å  
Ti / Ni / Ag 11,300Å  
GEOMETRY  
GROSS DIE PER 4 INCH WAFER  
2,200  
E
PRINCIPAL DEVICE TYPES  
CZT3120  
B
BACKSIDE COLLECTOR  
R1  
145 Adams Avenue  
Hauppauge, NY 11788 USA  
Tel: (631) 435-1110  
Fax: (631) 435-1824  
www.centralsemi.com  
R3 (26-March 2004)  

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