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CNZ1110R PDF预览

CNZ1110R

更新时间: 2024-01-14 07:08:03
品牌 Logo 应用领域
松下 - PANASONIC 输出元件光电
页数 文件大小 规格书
3页 200K
描述
Transistor Output Slotted Switch, 1-Channel, 2.8mm Slot Width, PISTR104-009, 4 PIN

CNZ1110R 技术参数

生命周期:Obsolete包装说明:PISTR104-009, 4 PIN
Reach Compliance Code:unknown风险等级:5.84
Coll-Emtr Bkdn Voltage-Min:30 V配置:SINGLE
最大暗电源:200 nA最大正向电流:0.05 A
间隙大小:2.8 mm安装特点:THROUGH HOLE MOUNT
功能数量:1最大通态电流:0.00215 A
最大通态电压:30 V标称通态集电极电流:0.75 mA
最高工作温度:85 °C最低工作温度:-25 °C
光电设备类型:TRANSISTOR OUTPUT SLOTTED SWITCH输出电路类型:Transistor
标称槽宽:2.8 mm表面贴装:NO
Base Number Matches:1

CNZ1110R 数据手册

 浏览型号CNZ1110R的Datasheet PDF文件第2页浏览型号CNZ1110R的Datasheet PDF文件第3页 
Transmissive Photosensors (Photo lnterrupters)  
CNZ1110 (ON1110)  
Photo Interrupter  
Unit: mm  
Mark for Indicating  
LED side  
For contactless SW, object detection  
A - A'  
Cross section  
2.8±±.2  
13.8±±.3  
Overview  
6
±±.2  
CNZ1110 is a photocoupler in which a high efficiency GaAs  
infrared light emitting diode is used as the light emitting element,  
and a high sensitivity phototransistor is used as the light detectin
element. The two elements are arranged so as to face each other,  
and objects passing between them are detected.  
±.4±±.1  
A
±.5  
±.7  
Features  
Highly precise position detection: 0.3 mm  
Fast response tr , tf = 6 µs (typ.)  
Small output current variation against chage itemprature  
Small package used for saving mounting spac
Absolute Maximum Ratings Ta = 25°
(3)  
(4)  
(2.54)  
1: Anode  
2: Cathode  
3: Collector  
4: Emitter  
(1)  
(1±)  
PISTR104-009 Package  
Parameter  
Symbol Rating  
Unit  
V
Internal Connection  
Reverse voltage  
R  
IF  
3
Input (Light  
emitting diode) Forward urent  
Power dissipion *  
0  
75  
0  
mA  
mW  
V
2
3
4
PD  
Output (Photo Collctor-emitter ltage VCO  
transistor)  
(Baopen)  
1
Emittercollector voltag
(Basopen)  
5
V
lector curren
ollector power disspation *  
20  
100  
mA  
mW  
°C  
Note) 1: Input power derating ratio is 1.0 mW/°C at  
*
2
PC  
Ta 25°C.  
Temperatre Operating mbient temperature Topr  
Storage teperatu
25 to +85  
2: Output power derating ratio is 1.33 mW/°C  
at Ta 25°C.  
*
Tstg 30 to +100  
°C  
Electrtical Characteristics Ta = 25°C 3°C  
Symbol  
VF  
Conditions  
Min  
Typ  
Max  
1.5  
10  
Unit  
V
Input  
Fltage  
IF = 50 mA  
VR = 3 V  
1.2  
characteristics Revee current  
Terminal capacitance  
IR  
µA  
pF  
Ct  
VR = 0 V, f = 1 MHz  
VCE = 10 V  
50  
5
Output  
Collector-emitter cutoff current  
ICEO  
200  
nA  
characteristics (Base open)  
Collector-emitter capacitance  
CC  
IC  
VCE = 10 V, f = 1 MHz  
VCE = 1V, IF = 20 mA  
pF  
mA  
V
2
Transfer  
Collector current *  
0.3  
characteristics  
Collector-emitter saturation voltage VCE(sat) IF = 50 mA, IC = 0.1 mA  
0.3  
1
Rise time *  
tr  
tf  
VCC = 10 V, IC = 1 mA, RL = 100 Ω  
6
6
µs  
1
Fall time *  
µs  
Note) 1. Input and output are practiced by electricity.  
2. This device is designed be disregarded radiation.  
Sig. in  
VCC  
td: Delay time  
tr: Rise time  
tf: Fall time  
(Input pulse)  
90%  
10%  
(Output pulse)  
Sig. out  
td  
3. 1: Switching time measurement circuit  
*
RL  
tr  
tf  
50  
2: Rank classification  
*
Rank  
Q
R
S
IC (mA)  
0.30 to 0.85  
0.75 to 2.15  
> 1.85  
Note) The part number in the parenthesis shows conventional part number.  
Publication date: April 2004  
SHG00030BED  
1

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