Datasheet > CNZ1179(ON1179)

CNZ1179(ON1179)

更新时间： 2022-01-18 16:07:00

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描述
光デバイス－フォトカプラ?フォトセンサ－透過形フォトセンサ

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CNZ1179(ON1179) 数据手册

Transmissive Photosensors (Photo Interrupters)

CNZ1179 (ON1179)

Photo Interrupter

Unit : mm

For contactless SW, object detection

Overview

Mark for indicating

LED side

CNZ1179 is a photocoupler in which a high efficiency GaAs

infrared light emitting diode is used as the light emitting element,

and a high sensitivity phototransistor is used as the light detecting

element. The two elements are arranged so as to face each other,

and objects passing between them are detected.

13.0±0.3

6.2±0.2

5.0±0.2

0.45±0.1

2-R0.5

2-0.45

Features

Highly precise position detection : 0.3 mm

*9.75±0.3

*2.54±0.3

Wide gap between emitting and detecting elements, suitable for

thick plate detection

Fast response : t_r, t_f= 6 µs (typ.)

Pin connection

Small output current variation against change in temperature

(Note) * is dimension at the root of leads

Absolute Maximum Ratings (Ta = 25˚C)

Parameter

Symbol Ratings Unit

Reverse voltage (DC)

Forward current (DC)

Power dissipation

Collector current

V_R

I_F

Input (Light

emitting diode)

P_D

I_C

Collector to emitter voltage V_CEO

Output (Photo

transistor)

Emitter to collector voltage V_ECO

^*1Input power derating ratio is

1.0 mW/˚C at Ta ≥ 25˚C.

^*2Output power derating ratio is

Collector power dissipation P_C

100

Operating ambient temperature

Storage temperature

T_opr–25 to +85 ˚C

T_stg–30 to +100 ˚C

Temperature

1.33 mW/˚C at Ta ≥ 25˚C.

Electrical Characteristics (Ta = 25˚C)

Parameter

Symbol

Conditions

min

typ

max Unit

Forward voltage (DC)

Reverse current (DC)

Collector cutoff current

Collector to emitter capacitance

Collector current

V_FI_F= 50mA

1.2

1.5

µA

µs

Input

characteristics

I_RV_R= 3V

I_CEOV_CE= 10V

200

Output

characteristics

C_CV_CE= 10V, f = 1MHz

I_CV_CE= 10V, I_F= 20mA, R_L= 100Ω

t_r, t_f^*V_CC= 10V, I_C= 1mA, R_L= 100Ω

0.3

Transfer

Response time

characteristics

Collector to emitter saturation voltage V_CE(sat)I_F= 50mA, I_C= 0.1mA

0.3

^*Switching time measurement circuit

Sig.IN

V_CC

t_d: Delay time

(Input pulse)

t_r: Rise time (Time required for the collector current to increase

from 10% to 90% of its final value)

90%

10%

Sig.OUT

(Output pulse)

t_d

t_f: Fall time (Time required for the collector current to decrease

from 90% to 10% of its initial value)

50Ω

R_L

t_r

t_f

Note) The part number in the parenthesis shows conventional part number.

12 3

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