Datasheet > CNL637

CNL637

更新时间： 2024-09-20 01:15:35

品牌	Logo	应用领域
CDIL		局域网
页数	文件大小	规格书
5页	348K
描述
SILICON PLANAR EPITAXIAL TRANSISTORS

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中文翻译

获取价格

数据手册

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CNL637 数据手册

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

SILICON PLANAR EPITAXIAL TRANSISTORS

CNL635

CNL637

CNL639

CPL636

CPL638

CPL640

NPN

PNP

TO-92

Plastic Package

Suitable for Driver Stage of Audio Amplifier

ABSOLUTE MAXIMUM RATINGS (T_a=25ºC Unless Otherwise Specified)

CNL635

CPL636

CNL637 CNL639

CPL638 CPL640

DESCRIPTION

SYMBOL

UNIT

V_CEO

V_CBO

V_EBO

I_C

Collector Emitter Voltage

Collector Base Voltage

100

Emitter Base Voltage

Collector Current Continuous

Collector Current Peak

I_CM

I_B

1.5

Base Current Continuous

Base Current Peak

100

200

0.8

1.0

2.0

I_BM

Power Dissipation @ T_a=25ºC

Power Dissipation @ T_c=25ºC

P_D

*P_D

P_D

Operating And Storage Junction

Temperature Range

T_j, T_stg

-55 to +150

ºC

*Transistors mounted on printed circuit board. Lead Length 4mm, mounting pad for collector lead min

10mm x 10 mm, copper

ELECTRICAL CHARACTERISTICS (T_a=25ºC Unless Otherwise Specified)

TEST CONDITION

VALUE

DESCRIPTION

SYMBOL

UNIT

I_C=1mA, I_B=0

V_CEO

Collector Emitter Voltage

CNL635, CPL636

CNL637, CPL638

CNL639, CPL640

I_C=100mA, I_E=0

>45

>60

>80

V_CBO

Collector Base Voltage

CNL635, CPL636

CNL637, CPL638

CNL639, CPL640

I_E=10mA, I_C=0

>45

>60

>100

V_EBO

I_CBO

Emitter Base Voltage

V_CB=30V, I_E= 0

<100

<10

Collector Cut-off Current

V_CB=30V, I_E= 0, T_a=125^oC

V_CE=2V, I_C= 500mA

I_C=500mA, I_B=50mA

*V_{BE (on)}

*V_CE(sat)

Base Emitter On Voltage

<0.5

Collector Emitter Saturation Voltage

CNL635_40 Rev_1 020505D

Data Sheet

Page 1 of 5

Continental Device India Limited

12 3 4 5

中文翻译

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